Numerical calculation and analysis of proton radiation effects on CCD based on Monte Carlo method
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摘要: 针对空间质子诱发CCD性能退化问题，开展了CCD质子辐照效应的三维蒙特卡罗模拟研究。采用三维蒙特卡罗软件Geant4模拟计算了不同能量质子在Si和SiO2中的射程及Bragg峰，分析了不同能量质子在材料中能量沉积的过程，并将模拟结果与相关数据进行对比，模拟误差在5%以内。根据质子与材料相互作用的物理过程，选取了合适的Lindhard分离函数，添加合适的物理过程，模拟计算了不同能量质子在SiO2中的电离能量损失和Si中的非电离能量损失，并将结果与国外相关数据进行对比。根据CCD的生产工艺参数，建立了单个像元的三维模拟模型，确定了质子辐照损伤的灵敏体积，模拟计算了不同能量质子在像元灵敏体积内的电离能量沉积与非电离能量沉积，分析了CCD不同能量质子的辐照损伤差异产生的机理。结合粒子输运计算结果与CCD质子辐照实验结果，分析了质子辐照诱发CCD辐射敏感参数退化的物理机制。
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关键词:
- 电荷耦合器件(CCD) /
- 质子 /
- Geant4 /
- 电离能量沉积 /
- 非电离能量沉积
Abstract: Numerical calculation and analysis of proton radiation effects on CCD based on Monte Carlo method were developed by Geant4, a 3-D Monte Carlo code. The projected ranges and Bragg peaks of protons in Si and SiO2 were calculated and the results were in good agreement with the reference data. The ionizing energy losses of protons in SiO2 and non-ionizing energy losses in Si were also calculated and the results were in good agreement with the reference data. The detailed geometry model of the pixel of CCD was established. The ionizing energy deposition and non-ionizing energy deposition in the sensitive region of CCD caused by protons at different energy were calculated. The proton radiation effects on CCD were analyzed by combining experiment results and the numerical calculation. The achievements of this paper provide a basis of theories for CCD radiation degradation mechanisms and radiation damage evaluation study.-
Key words:
- charge coupled device /
- proton /
- Geant4 /
- ionizing energy deposition /
- non-ionizing energy deposition
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图 4 质子在SiO2中的IEL随能量的变化关系(和NIST对
Figure 4. Variation of ionizing energy loss(IEL) with proton energy
图 5 质子在Si中的NIEL随能量的变化关系
Figure 5. Variation of nonionizing energy loss (NIEL) with proton energy
图 7 质子在CCD像元中输运过程示意图
Figure 7. Schematic of track structure induced by incident proton
图 9 不同能量质子在CCD像元中的径迹示意图
Figure 9. Schematic of the track structure induced by incident protons traversing through one CCD pixel
图 10 电荷转移效率与质子能量的关系
Figure 10. Variation of charge transfer efficiency(CTE) with incident proton energy
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