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微波功率放大器发展概述

李建兵 林鹏飞 郝保良 孙建邦

李建兵, 林鹏飞, 郝保良, 等. 微波功率放大器发展概述[J]. 强激光与粒子束, 2020, 32: 073001. doi: 10.11884/HPLPB202032.200095
引用本文: 李建兵, 林鹏飞, 郝保良, 等. 微波功率放大器发展概述[J]. 强激光与粒子束, 2020, 32: 073001. doi: 10.11884/HPLPB202032.200095
Li Jianbing, Lin Pengfei, Hao Baoliang, et al. Overview of development of microwave power amplifiers[J]. High Power Laser and Particle Beams, 2020, 32: 073001. doi: 10.11884/HPLPB202032.200095
Citation: Li Jianbing, Lin Pengfei, Hao Baoliang, et al. Overview of development of microwave power amplifiers[J]. High Power Laser and Particle Beams, 2020, 32: 073001. doi: 10.11884/HPLPB202032.200095

微波功率放大器发展概述

doi: 10.11884/HPLPB202032.200095
基金项目: 国家“核高基”重大专项项目(2014ZX01009-101-006,2017ZX01004-101-009A)
详细信息
    作者简介:

    李建兵(1976—),男,博士,副教授,研究方向为微波功率模块;49286894@qq.com

  • 中图分类号: TN83

Overview of development of microwave power amplifiers

  • 摘要:

    微波功率放大器分为真空和固态两类,分别分析了两类器件的原理和特点,然后介绍了它们的发展历史、当前的技术研究状况和未来发展趋势。重点介绍了两种器件相结合的产物——微波功率模块,包括微波功率模块的产生过程和当前国内外的发展状况,并对未来的发展趋势进行了分析和预测。

  • 图  1  真空功率器件MTTF概况

    Figure  1.  Mean time to failure (MTTF) of vacuum power device

    图  2  MPM的组成

    Figure  2.  Composition of microwave power module(MPM)

    图  3  当前MPM频率功率分布

    Figure  3.  Current frequency power distribution of MPM

    图  4  M1871 MPM

    Figure  4.  M1871 MPM

    图  5  中国电子科技集团公司第十二研究所4~18 GHz 50 W MPM

    Figure  5.  4~8 GHz 50 W MPM of Beijing Vacuum Electronics Research Institute

    图  6  Ku频段500 W脉冲双管MPM

    Figure  6.  Ku band 500 W double tube pulse MPM

    图  7  TH24512 MPM

    Figure  7.  TH24512 MPM

    图  8  信息工程大学的超薄EPC组件

    Figure  8.  Ultra-thin EPC components of Information Engineering University

    图  9  真空、固态及MPM最新饱和输出功率随频率变化图

    Figure  9.  Saturated output power vs frequency of current microwave power amplifiers

    表  1  国内外典型毫米波产品

    Table  1.   Typical millimeter wave products

    serialfrequency/GHzpower/Wduty cycle/%efficiency/%manufacturermain application
    1 231~235 5~25 50 11 L3 radar(SAR)
    2 90.6~91.4 300 50 L3 seeker,radar
    93~95 50 CW 15 CPI radar communication
    W band(bandwidth 5 GHz) 150 20 20 CETC12 radar communication
    W band(bandwidth 0.5 GHz) 200 10 THALES seeker,radar
    3 81~86 200 CW 50 L3 communication
    4 47~52.4 125 CW 35 L3 communication
    47~52.4 120 CW 30 CETC12 communication
    43.5~45.5 200 CW 46 L3 communication
    5 34~36 1000 50 40 L3 seeker,radar
    32~37 700 50 40 CETC12 radar
    27.5~31 500 CW 57 L3/NEC/CPI communication
    27.5~31 300 CW 45 CETC12 communication
    下载: 导出CSV

    表  2  THz行波管测试结果

    Table  2.   THz TWT test results

    frequency/THzcathode voltage/kVbeam current/mAsaturated gain/dBpeak power/mW3 dB bandwidth/GHzduty cycle/%
    0.649.74.8222591510
    0.679.63.11771150.5
    0.8511.42.822391511
    1.0312.12.3202950.3
    下载: 导出CSV

    表  3  几种半导体材料的主要特性参数

    Table  3.   Main characteristic parameters of several semiconductor materials

    materialband gap
    width/eV
    electron
    mobility/
    (cm2·V−1·s−1
    saturated electron
    velocity/
    (107 cm·s−1
    breakdown field
    strength/
    (MV·cm·−1
    thermal
    conductivity/
    (W·cm−1·K−1
    relative
    permittivity
    Baliga value
    (high frequency)
    Baliga value
    (low frequency)
    Si1.121 40010.31.511.411
    GaAs1.428 50020.40.513.11116
    4H-SiC3.251 020234.99.773600
    GaN3.451 000(GaN)
    2 000(AlGaN/GaN)
    2.73.328.91801 450
    下载: 导出CSV
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出版历程
  • 收稿日期:  2020-04-26
  • 修回日期:  2020-06-15
  • 刊出日期:  2020-06-24

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