Design of drift step recovery diode pulse power generator based on magnetic saturation transformer

Shi Xiaolei; Chen Jinhui; Wang Guanwen; Wang Lei; Zeng Tao; Yang Wei; Wang Xu; Su Wentong; Wu Guanjian

doi:10.11884/HPLPB202032.190387

Volume 32 Issue 2

Dec. 2019

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Shi Xiaolei, Chen Jinhui, Wang Guanwen, et al. Design of drift step recovery diode pulse power generator based on magnetic saturation transformer[J]. High Power Laser and Particle Beams, 2020, 32: 025020. doi: 10.11884/HPLPB202032.190387

Citation:

Shi Xiaolei, Chen Jinhui, Wang Guanwen, et al. Design of drift step recovery diode pulse power generator based on magnetic saturation transformer[J]. High Power Laser and Particle Beams, 2020, 32: 025020. doi: 10.11884/HPLPB202032.190387

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Design of drift step recovery diode pulse power generator based on magnetic saturation transformer

doi: 10.11884/HPLPB202032.190387

1.
School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
2.
Accelerator Division, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2019-09-28
Rev Recd Date: 2019-12-26
Publish Date: 2019-12-26

Abstract

Abstract

Drift step recovery diode (DSRD) has a great application prospect in pulse power technology for its notably short switching-off time, high repetition rate and large working current. In this paper, a DSRD pump circuit topology based on magnetic saturation transformer is studied. The topology is small, light and reliable. According to the operating requirements of DSRD, a pump circuit was designed. It consists of a power MOSFET primary switch and a magnetic saturation transformer with boost and saturation characteristics. The circuit was simulated by Pspice software, which confirmed the principles of the circuit. Based on the simulation analysis, a prototype was designed and its circuit experiment was implemented. The experiment indicates that when the charging voltage is 800 V, the pulse amplitude on resistor load of 50 Ω is larger than 7 kV, the rise time is less than 4.2 ns (10%−90%) and the FWHM is about 10 ns.
- drift step recovery diode,
- magnetic saturation transformer,
- nanosecond pulse power generator,
- MOSFET

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References(14)

References

[1]	陈锦晖, 王磊, 施华, 等. HEPS在轴注入冲击器系统及快脉冲电源样机研制[J]. 强激光与粒子束, 2019, 31:040017. (Chen Jinhui, Wang Lei, Shi Hua, et al. Application of fast pulsed power supply to high energy photon source[J]. High Power Laser and Particle Beams, 2019, 31: 040017 doi: 10.11884/HPLPB201931.190007
[2]	刘锡三. 高功率脉冲技术[M]. 北京: 国防工业出版社, 2005. Liu Xisan. High pulsed power technology[M]. Beijing: National Defense Industry Press, 2005
[3]	Cook E G. Review of solid-state modulators[C]//Proc of XX International Linac Conference. 2000
[4]	吴佳霖, 刘英坤. 高功率半导体开关器件DSRD的研究进展[J]. 微纳电子技术, 2015, 52(4):311-215, 250. (Wu Jialin, Liu Yingkun. Research development of the high power semiconductor switching device DSRD[J]. Micronanoelectronic Technology, 2015, 52(4): 311-215, 250
[5]	梁勤金, 邓晓磊, 石小燕, 等. 新型半导体开关高压电磁脉冲产生技术[J]. 强激光与粒子束, 2012, 24(2):497-500. (Liang Qinjin, Deng Xiaolei, Shi Xiaoyan, et al. High voltage electromagnetic pulse generation using semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24(2): 497-500 doi: 10.3788/HPLPB20122402.0497
[6]	Krasnykh A. Overview of driver technologies for nanosecond TEM kickers[C]//Proceedings of the 7th International Particle Accelerator Conference. 2016, 3645-3647.
[7]	Benwell A, Burkhart C, Krasnykh A, et al. A 5kV, 3MHz solid-state modulator based on the DSRD switch for an ultra-fast beam kicker[C]//IEEE Power Modulator and High Voltage Conference. 2013: 328-331.
[8]	Lyublinsky A G, Korotkov S V, Aristov Y V, et al. Pulse power nanosecond-range DSRD-based generators for electric discharge technologies[J]. IEEE Trans Plasma Science, 2013, 41(10): 2625-2629. doi: 10.1109/TPS.2013.2264328
[9]	Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switches[J]. IEEE Trans Plasma Science, 2000, 28(5): 1540-1544. doi: 10.1109/27.901229
[10]	Brylevsky V I, Efanov V M, Kardo-Sysyev A F, et al. Power nanosecond semiconductor opening plasma switches[J]//Proceedings of IEEE International Power Modulator Symposium. 1996: 51-54.
[11]	张玲, 周斌, 谢义方, 等. 基于漂移阶跃恢复二极管的超宽带探地雷达发射技术[J]. 强激光与粒子束, 2009, 21(12):1854-1858. (Zhang Ling, Zhou Bin, Xie Yifang, et al. Transmitter techniques for ultra-wideband ground penetrating radar based on drift step recovery diodes[J]. High Power Laser and Particle Beams, 2009, 21(12): 1854-1858
[12]	Min B D, Kim J H, Pavlov E, et al. A compact inductive type pulse generator using diodes as opening switch[C]//IEEE Pulsed Power Conference. 2005: 1364-1367.
[13]	Korotkov S V, Aristov Y V, Voronkov V B, et al. A small dynistor generator of high-power nanosecond pulses[J]. Instruments and Experimental Techniques, 2018, 61(1): 44-46. doi: 10.1134/S0020441217060057
[14]	Korotkov S V, Aristov Y V, Voronkov V B, et al. Semiconductor switches of laser pumping pulses of nanosecond duration[J]. Instruments & Experimental Techniques, 2009, 52(5): 699.