Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch
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摘要: 采用V掺杂半绝缘6H-SiC单晶衬底材料制备了平面电极型大功率SiC光导开关，用强度为150 J/mm2、波长为355 nm的脉冲激光对开关进行触发，在1~14 kV的外加电压范围内对光导开关的耐压特性、导通电阻等性能进行了研究。结果表明：随着开关外加电压的升高，开关的电流峰值呈现不断增大的趋势，当开关外加电压为14 kV时，电流峰值达185 A，对应的光导开关峰值功率为2.59 MW，开关的导通电阻约为22 。Abstract: High power photoconductive semiconductor switches (PCSSs) were fabricated on V-doped semi-insulating 6H-SiC single crystal. The 6H-SiC PCSS were measured by applying a bias voltage from 1 kV to 14 kV. The triggered laser was a 355 nm pulse laser with an energy density of 150 J/mm2. The peak photocurrent shows an increasing trend with improving the applied voltage. The peak photocurrent running through the PCSS and the calculated on-state resistance are 185 A and about 22 respectively when the applied voltage reaches 14 kV, and the corresponding peak power is 2.59 MW.
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Key words:
- silicon carbide /
- photoconductive semiconductor switch /
- on-state resistance /
- peak power
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