Effects of trigger light pulse on open performance of nonlinear photoconductive switch
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摘要: 设计了异面结构的GaAs光导开关，开关厚度为0.6 mm，电极间隙为3 mm。利用半导体激光二极管对开关进行了触发实验。随着开关两端偏置电压不断升高，开关输出脉冲幅度线性增加，输出波形与光脉冲相似，当偏置电压超过一定阈值，开关输出脉冲幅度显著增强，输出脉冲前沿快于光脉冲，开关进入了非线性工作模式。开关进入非线性模式，除了与偏置电压有关外，还与触发光脉冲前沿、能量有关，实验发现触发光脉冲前沿越快，能量越高，开关越容易进入非线性工作模式，所需的偏置电压也越低，但当电压低至某一阈值时(实验中约6 kV)，即使增加触发光能，开关也无法进入非线性模式。Abstract: A vertical GaAs PCSS is fabricated with a thickness of 0.6 mm and a gap of 3 mm, and the triggering experiment is carried out by semiconductor laser diode. Along with enhanced electric field, the output voltage increases linearly, the output waveform is similar to the laser waveform. When bias electric field exceeds the threshold, the output voltage increases rapidly, and the output voltage impulse is faster than the laser impulse which shows PCSS turns into nonlinear mode. Except for the bias voltage, PCSS turning into nonlinear mode is also associated with the speed and the energy of the trigger light pulse. Experiment indicates that the higher trigger energy is, the faster the rise-time is, the more likely the working mode of PCSS turns into nonlinear and the needing electric field is lower. But when bias electric field falls under the threshold (about 6 kV in this experiment), PCSS can not turn into nonlinear, even if the trigger light energy is enhanced.
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Key words:
- GaAs /
- photoconductive semiconductor switch /
- nonlinear /
- semiconductor diode
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