Simulation study on performances of rod-pinch diode on 1.2 MV X-ray generator Scorpio
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摘要: 为了深入研究杆箍缩二极管的物理性能,采用蒙特卡罗方法对中国工程物理研究院流体物理研究所1.2 MV天蝎X光机的杆箍缩二极管进行模拟研究,包括PIC模拟和光电子输运模拟。着重分析了杆箍缩二极管结构参数与阻抗及出光剂量等的关系,发现阻抗和出光剂量与阴阳极半径比正相关,而出光剂量和杆探出长度正相关。提出一种阻止阴极盘后表面发射电子的设想,有望显著提高X射线辐射剂量。Abstract: The impedance and X-ray radiography states are the main references of rod-pinch diode. In order to study the physical performances of rod-pinch diode, a PIC and photoelectron transport simulation based on Monte Carlo is used to simulate the physics of the 1.2 MV X-ray generator Scorpio rod pinch diode at Institute of Fluid Physics, CAEP. The influence of structure parameters, including anode-cathode radius rate and anode rod stretching out length, on the diode impedance and radiography is given. The simulation results show good uniformity with theory and experiment. A model is proposed to increase the radiation dose rate, which might be applied in the future design of rod-pinch diode.
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Key words:
- rod-pinch diode /
- pulsed power /
- radiography /
- Monte-Carlo simulation /
- impedance
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