玻璃衬底二氧化钒薄膜的宽频带太赫兹波调制特性

陈晨; 罗振飞; 蒋亚东; 吴志明; 孟庆龙; 杨存榜; 周逊; 张彬

doi:10.11884/HPLPB201628.023104

玻璃衬底二氧化钒薄膜的宽频带太赫兹波调制特性

doi: 10.11884/HPLPB201628.023104

陈晨^1,2,
罗振飞²,
蒋亚东^3, ,,
吴志明³,
孟庆龙¹,
杨存榜²,
周逊²,
张彬¹,

1.
四川大学电子信息学院, 成都 61 0064;
2.
中国工程物理研究院激光聚变研究中心, 成都 61 0041 ;
3.
电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室, 成都 61 0054

详细信息

通讯作者:
蒋亚东

蒋亚东

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出版历程
- 收稿日期: 2015-07-18
- 修回日期: 2015-11-10
- 刊出日期: 2016-02-15

Broadband THz modulation characteristics of vanadium dioxide thin film prepared on glass substrate

1.
College of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China;
2.
Research Center of Laser Fusion,CAEP,Chengdu 610041,China;
3.
State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China

摘要

摘要: 针对二氧化钒（VO2）薄膜在可调谐太赫兹功能器件中的应用, 采用磁控溅射法在K9玻璃衬底上制备了VO2薄膜, 并用X射线衍射（XRD）对薄膜的晶相进行表征。利用配备加热装置的太赫兹时域光谱系统（THz-TDS）研究了薄膜样品在变温过程中的THz反射、透射光谱特性及其变化规律。实验结果表明, 随着加热温度的升高, VO2薄膜发生半导体-金属相变并对宽频段THz波产生显著的调制作用。调制深度明显依赖于THz频率, 薄膜样品对THz波反射功率、透射率的幅度调制深度在0.3~0.5 THz范围波动较大；对THz波的透射率在低频处较大, 高频处较小, 调制深度在35%~65%之间变化。该薄膜制备简单, 质量高, 可应用于太赫兹开关和调制器等功能器件。
- 二氧化钒 /
- 太赫兹 /
- THz时域光谱系统 /
- 调制
Abstract: For the applications of vanadium dioxide (VO2) thin film in terahertz tunable functional devices, the vanadium dioxide VO2 thin film was prepared by magnetron sputtering technique on K9 glass substrate, and the crystal structure was characterized by X-ray diffraction (XRD). Spectral characteristics and their variations of terahertz (THz) reflection and transmission signal passing through the sample at different temperatures were studied by the THz time domain spectroscopy system (THz-TDS) equipped with heating device. The experimental results indicated that the semiconductor-metal transition of VO2 thin film occurred with the increase of the heating temperature and showed excellent modulation to the broadband THz wave. The modulation depth was dependent on the THz frequency. The THz wave amplitude modulation depth of reflection power and transmission showed remarkable fluctuation in the band of 0.3-0.5 THz. The transmittance of THz wave was larger in the low frequency band than that in the high frequency band, and the modulation depth varied in the range of 35%-65%. The thin film was prepared simply and had high quality, which can be applied to THz modulator functions such as devices and switches.
- vanadium dioxide /
- terahertz /
- THz time domain spectroscopy system /
- modulation