GGMOS型静电放电防护器件的高功率微波效应

黄志娟; 刘美琴; 贡顶; 李勇; 杨志强

doi:10.11884/HPLPB201628.033024

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GGMOS型静电放电防护器件的高功率微波效应

doi: 10.11884/HPLPB201628.033024

1.
西安交通大学电子与信息工程学院,电子物理与器件教育部重点实验室, 西安 71 0049;
2.
苏州珂晶达电子有限公司, 江苏苏州 21 5021 ;
3.
西北核技术研究所, 西安 71 0024

详细信息

通讯作者:
黄志娟

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- 被引次数: 6
出版历程
- 收稿日期: 2015-10-28
- 修回日期: 2015-12-15
- 刊出日期: 2016-03-15

High power microwave effect of electrostatic discharge type GGMOS protection device

1.
College of Electronic and Information Engineering,Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Xi’an Jiaotong University,Xi’an 710049,China;
2.
Suzhou Ke Jingda Electronic Co Ltd,Suzhou 215021,China;
3.
Northwest Institute of Nuclear Technology,Xi’an 710024,China

摘要

摘要: 采用基于半导体漂移扩散模型的数值模拟软件对高功率微波（HPM）作用下GGMOS型的静电放电（ESD）防护器件效应进行了数值模拟研究。对ESD器件在HPM作用下的响应特性及器件内部的物理图像进行了数值模拟。数值模拟的结果表明，外部注入HPM信号的幅值和频率是影响ESD器件的因素，在加载30 ns脉宽的HPM脉冲作用下，器件内部达到的最高温度与信号幅值成正指数关系。在给ESD注入相同幅值的HPM信号时，频率越大，器件达到失效温度所需要的时间越长。
- 高功率微波 /
- MOSFET /
- 静电放电器件 /
- 半导体 /
- 数值模拟
Abstract: The response of MOSFET to HPM is numerically studied by a simulator based on semiconductor drift-diffusion model. The response characteristics of ESD device under the action of HPM and the physical image of the device are simulated. The results of numerical simulation show that the amplitude and the frequency of the HPM signal are the factors that affect the ESD device, and the maximum temperature and the signal amplitude are positive exponential relationship with the HPM pulse width of the 30ns pulse. When the HPM signal is injected into the same amplitude ESD signal, the larger the frequency is, the longer the device can achieve the failure temperature. The results of this paper can provide a theoretical reference for the research of the damage mechanism of MOS device and the reinforcement design of the HPM device.
- high power microwave /
- MOSFET /
- electrostatic discharge device /
- semiconductor /
- numerical simulation