Narrow-band Si/Mo/C multilayer mirrors working at 13 nm
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摘要: 基于多层膜准单色覆盖50~1500 eV能谱的多能点发射光谱测量系统可获得聚龙一号装置Z-pinch等离子体X射线源的能谱结构和总能量等信息。考虑装置的条件,在13 nm处的多层膜需要工作在掠入射角60。常规的Mo/Si多层膜尽管反射率最高,但其带宽较大,不能满足多层膜准单色的要求。因此提出将Mo和C共同作为多层膜的吸收层材料与Si组成Si/Mo/C多层膜,可使反射率降低较小而带宽明显减小。采用磁控溅射方法制备了Si/Mo/C多层膜,其掠入射X射线反射测量表面多层膜的结构清晰完整,同步辐射工作条件下反射率测量,得到Si/Mo/C多层膜在13 nm处和掠入射角60时的反射率为56.5%,带宽为0.49 nm(3.7 eV)。Abstract: A multi-energy-point emission spectrum measurement system can be implemented on primary test stand (PTS) facility based on multilayer covering from 50 eV to 1500 eV quasi monochromatically. The information of spectrum structure and total energy of this Z-pinch plasma X-ray radiation source can be obtained from this system. The multilayer working at 13 nm is required to operate under a grazing incidence angle of 60 given the facility condition. The highest reflectivity can be achieved by the conventional Mo/Si multilayer, but it will display a large bandwidth, which cannot satisfy the quasi-monochromatic requirement for the multilayer. This paper proposes that taking Mo and C together as the absorbing materials to combine with Si to form Si/Mo/C multilayer, which can significantly reduce the bandwidth with a slight decrease of the reflectivity. This kind of Si/Mo/C multilayer was fabricated by direct current magnetron sputtering technique. The grazing incidence X-ray reflectivity (GIXR) has shown the multilayer with a clear and complete structure. The EUV reflectivity measurement at the synchrotron radiation light source has demonstrated this Si/Mo/C multilayer with a reflectivity of 56.5% and a bandwidth of 0.49 nm (3.7 eV).
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Key words:
- multilayer /
- Mo/Si /
- Si/Mo/C /
- Z-pinch /
- spectrum diagnostics /
- reflectivity /
- bandwidth
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