Ⅰ层厚度对限幅器热损伤效应的影响

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Influence of Ⅰ layer thickness on thermal damage process of PIN limiter

1.
Science and Technology on High Power Microwave Laboratory,Institute of Applied Electronics,CAEP,P.O.Box 919-1015,Mianyang 621900,China;
2.
Complicated Electromagnetic Environment Laboratory of China Academy of Engineering Physics,Mianyang 621900,China;
3.
Graduate School of China Academy of Engineering Physics,Beijing 100088,China

摘要: 基于器件物理模拟分析法研究PIN限幅器二极管的微波脉冲热效应，利用Sentaurus-TCAD仿真器建立了PIN二极管二维多物理场仿真模型，研究了在5.3，7.5，9.4 GHz的微波脉冲作用下，不同Ⅰ层厚度的二极管模型的峰值温度变化。仿真结果表明：Ⅰ层厚度对PIN二极管微波脉冲热效应的影响分两个阶段，拐点前厚度增加，峰值温度提高，拐点后厚度增加峰值温度降低；一定范围内微波脉冲频率的变化对拐点影响不明显。
- Ⅰ层厚度 /
- PIN限幅器 /
- 器件仿真 /
- 热损伤 /
- 微波脉冲
Abstract: Based on the device physics simulation, we studied the microwave pulse thermal process of the PIN limiter diode, and the devices 2D multi-physical field model was established with software Sentaurus-TCAD. The peak temperature change of different thickness of Ⅰ layer was analyzed under injections of 5.3,7.5 and 9.4 GHz microwave signals. Simulation results show that the influence of Ⅰ layer thickness on thermal process of PIN diode divides into two stages, before the turning point, the peak temperature changes with the increasing of Ⅰ layer thickness, after the point the peak temperature decreases with the increasing of Ⅰ layer thickness. The influence of microwave pulse frequency on the turning point is not obvious.
- thickness of Ⅰ layer /
- PIN limiter /
- simulation of device /
- thermal damage /
- microwave pulse