Simulation and calculation of pulsed power source based on drift step recovery diode switching
-
摘要: 介绍了新型半导体开关漂移阶跃恢复二极管(DSRD)的工作原理和特性，总结了基于半导体开关器件的脉冲源的发展现状及应用。基于DSRD的等效模型，建立了其正反向泵浦电路的仿真模型，按照输出电压参数的要求，对主储能电感、初级储能电感的取值进行了仿真计算分析，并得到了主回路各元件参数的最优值。通过仿真分析了MOSFET漏源端寄生电容与限压并联电容对输出参数的影响，得到了限压并联电容最优值为0.2 nF，通过计算与仿真得到隔直电容的最优值为100 pF。研制了一款可连续输出的脉冲功率源，其重复频率为1 MHz，脉冲前沿等于680 ps(20%~90%)，电压幅值2 kV，半高宽1.5 ns。Abstract: This paper describes the operation principle and characteristic of the drift step recovery diode (DSRD), a new type of semiconductor switching, and summarizes the development and application of pulsed power source based on semiconductor switching. Based on the equivalent model of DSRD switching, it builds the simulation model of the forward and reverse pumping current circuit. Based on the output voltage, it simulates and calculates the main energy storage inductance and primary energy storage inductance, gets the optimum parameters of other components. It analyzes the value of the parallel capacitor and the MOSFET parasitic capacitor output parameter, and gets the optimum values of parallel capacitor and blocking capacitor. A pulsed power source was designed based on the DSRD. The source can work in continuous mode, with the amplitude above 2 kV, the rise time less than 680 ps(from 20% to 90%), the FWHM about 1.5 ns and the working frequency more than 1 MHz.
-
Key words:
- drift step recovery diode /
- pumping circuit /
- sub-nanosecond /
- high frequency
-
图 5 电容C1对MOSFET漏极端电压Vds的影响
Figure 5. Waveforms of MOSFET drain-source voltage changing with capacitance C1
图 6 电容C1对负载输出电压V0的影响
Figure 6. Waveforms of output voltage V0 changing with capacitance C1
图 8 电容C3对输出电压V0的影响
Figure 8. Waveforms of output voltage V0 changing with capacitance C3
-
[1] 余岳辉, 梁琳. 脉冲功率器件及其应用[M]. 北京: 械工业出版社, 2010: 212-217.Yu Yuehui, Liang Lin. Pulse power device and application. Beijing: China Machine Press, 2010: 212-217 [2] Efanov V M, Kardo A F, Larionov M A, et al. Powerful semiconductor 80 kV nanosecond pulser[J]. IEEE Transactions on Plasma Science, 2010, 38(5): 1118-1123. doi: 10.1109/TPS.2010.2043857 [3] Kesar A S, Merensky L M, Ogranovich M, et al. 6-kV, 130-ps rise-time pulsed-power circuit featuring cascaded compression by fast recovery and avalanche diodes[J]. Electronics Letters, 2013, 49(24): 1539-1540. doi: 10.1049/el.2013.2129 [4] 方旭, 丁臻捷, 浩庆松, 等. 基于DSRD的高重频亚纳秒脉冲产生方法研究[C]//第四届全国脉冲功率会议. 2015.Fang Xu, Ding Zhenjie, Hao Qingsong, et al. Study on generation of drift step recovery diodes for sub-nanosecond switching and high repetition rate operation//The 4th China Pulse Power Conference. 2015 [5] 马红梅, 刘忠山, 张勇, 等. 型亚纳秒切断半导体开关器件研制[J]. 器件制造与应用, 2010, 35(4): 337-339. https://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ201004015.htmMa Hongmei, Liu Zhong-shan, Zhang Yong, et al. Design and manufacture of novel sub-nanosecond opening semiconductor switch. Manufacturing and Application of Device, 2010, 35(4): 337-339 https://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ201004015.htm [6] Merensky L M, Kardo A F, Flerov A N, et al. A low-jitter 1.8-kV 100-ps rise-time 50-kHz repetition-rate pulsed-power generator[J]. IEEE Transactions on Plasma Science, 2009, 37(9): 1855-1862. doi: 10.1109/TPS.2009.2025377 [7] Merensky L M, Kardo A F, Shmilovitz D, et al. Efficiency study of a 2.2 kV, 1 ns, 1 MHz pulsed power generator based on a drift-step-recovery diode[J]. IEEE Transactions on Plasma Science, 2013, 41(11): 3138-3142. doi: 10.1109/TPS.2013.2284601 -
下载:
点击查看大图
图(9)
计量
- 文章访问数: 1354
- HTML全文浏览量: 416
- PDF下载量: 219
- 被引次数: 0
