测量离子束横向截面的闪烁体屏的热分析

王小胡; 李嘉辉; 杨振; 龙继东; 章林文

doi:10.11884/HPLPB201830.180054

测量离子束横向截面的闪烁体屏的热分析

doi: 10.11884/HPLPB201830.180054

王小胡^{1, 3,},
李嘉辉¹,
杨振²,
龙继东²,
章林文²

1.
西南科技大学国防科技学院, 四川绵阳 621010
2.
中国工程物理研究院流体物理研究所, 四川绵阳 621900
3.
西南科技大学核废物与环境安全国防重点学科实验室, 四川绵阳 621010

基金项目:

国家自然科学基金项目 11505147

详细信息

作者简介:
王小胡(1981-)，男，博士，副研究员，从事核辐射探测技术研究；wxh@swust.edu.cn

中图分类号: TL81
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出版历程
- 收稿日期: 2018-02-07
- 修回日期: 2018-05-16
- 刊出日期: 2018-09-15

Thermal effect of scintillation screens used for low energy deuterium ion beam profiling

1.
School of National Defense Science and Technology, Southwest University of Science and Technology, Mianyang 621010, China
2.
Institute of Fluid Physics, CAEP, P.O.Box 919-106, Mianyang 621900, China
3.
Fundamental Science on Nuclear Waste and Environmental Security Laboratory, Southwest University of Science and Technology, Mianyang 621010, China

摘要

摘要: 针对基于闪烁屏-CCD(电荷耦合元件)相机的氘离子束横向强度分布测量系统，利用ANSYS软件模拟计算了在直流及脉冲模式下，能量100 keV、束斑直径3 mm氘离子轰击造成的Al₂O₃, SiO₂以及锗酸铋(BGO)三种候选闪烁体材料的表面温度变化。结果表明，在30 μA的直流氘离子束轰击下，闪烁体表面温度随辐照时间急剧地升高。持续时间10 min的氘离子束轰击将使三种材料前表面的温度分别升高131，234和649 ℃。对于峰值流强30 μA、重复频率1 Hz、脉宽5 μs的重复频率脉冲氘离子束，每个脉冲引起的三种闪烁屏表面的温度升高均小于0.05 ℃，且长时间的离子辐照基本不会造成闪烁屏的表面温度有明显的升高。对于脉宽5 μs的单脉冲氘离子束，三种材料的表面温度均随离子流强近似呈线性地增加。在单脉冲模式下，Al₂O₃，SiO₂以及BGO闪烁屏能允许的最高离子流强分别为2.32，1.08和0.72 A，超过此流强其表面温度将达到熔点。
- 离子束 /
- 束流截面 /
- 闪烁体 /
- 热效应
Abstract: The neutron generator is widely used in the fields of oil logging and element on-line analysis. The measurement of the transverse intensity distribution of the deuterium ion beam at the target position is of great significance to the improvement and optimization of the neutron generator. For Al₂O₃, SiO₂ and BGO scintillation screens used for transverse ion beam profile measurements, the temperature rises of the materials caused by 100 keV and 3 mm in diameter deuterium ion beam radiation was calculated with ANSYS software. The results show that, for 30 μA DC deuterium ion beam, the surface temperatures of the scintillation screens increased dramatically with the irradiation time. After a total irradiation time of 10 minutes, the surface temperatures of the Al₂O₃, SiO₂ and BGO screens had increased by 131, 234 and 649 ℃ respectively. For pulsed ion beam with beam current of 30 μA, 1 Hz repetition rate and 5 μs pulse width, the temperature rise caused by a single beam pulse of the three scintillation screens were all less than 0.05 ℃, and the average temperatures of the scintillation screens almost kept unchanged even for long time ion irradiation. For a single pulsed deuterium ion beam with a beam width of 5 μs, the temperature change of the scintillation screens as the beam intensity varied was calculated. The results show that, the temperature of scintillation screens almost increased linearly with the beam current, and the maximum ion current allowed for Al₂O₃, SiO₂ and BGO scintillation screens was 2.32 A, 1.08 A and 0.72 A, respectively. For ion beam with current larger than the maximum allowed ion current, the surface temperature would reach the melting point of the materials.
- ion beam /
- beam profile /
- scintillator /
- heat effect

HTML全文

图 1 模型建立

Figure 1. Model established for measurement

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图 2 600 s内30 μA时闪烁体表面中心处的温度变化曲线

Figure 2. Temperature change at the center of the surfaces of the scintillators in 600 s at 30 μA

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图 3 离子辐照600 s后的温度场分布

Figure 3. Temperature field nephograms after 600 s of ion itradiation

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图 4 表面径向温度分布曲线

Figure 4. Surface radial temperature distribution curves

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图 5 中心位置轴向温度分布曲线

Figure 5. Axial temperature distribution curves at center position

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图 6 30 s内闪烁体表面中心处的温度变化曲线

Figure 6. Temperature change at the center of the surfaces of the scintillators in 30 s

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图 7 闪烁屏体表面中心处的温度随离子流强的变化曲线

Figure 7. Temperature change of the surfaces of the scintillators as a function of ion current

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表 1 闪烁体的热物理性能参数(20 ℃)

Table 1. The thermal physical properties of scintillator (20 ℃)

material	thermal conductivity/(W·m^-1·℃^-1)	specific heat/(J·kg^-1·℃^-1)	density/(kg·m^{- 3})	melting point/℃
Al₂O₃	29.2	881.7	3970	2045
BGO	2.6	305	7130	1050
SiO₂	11.7	744	2650	1710
stainless steel	16	500	7930	1400

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