一种220 GHz分布作用速调管的高频系统模拟

王自成; 曲兆伟; 尚新文; 曹林林; 唐伯俊; 肖刘

doi:10.11884/HPLPB201931.180312

一种220 GHz分布作用速调管的高频系统模拟

doi: 10.11884/HPLPB201931.180312

1.
中国科学院电子学研究所, 北京 101400
2.
中国科学院大学, 北京 100039

基金项目:

国家自然科学基金项目 61172016

北京市自然科学基金重点项目 201511232037

详细信息

作者简介:
王自成(1966—), 男, 博士, 研究员, 从事短毫米波与太赫兹器件的研究, wzich_cn@sina.com

中图分类号: TN128
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- 被引次数: 0
出版历程
- 收稿日期: 2018-11-10
- 修回日期: 2019-03-12
- 刊出日期: 2019-08-15

RF system of a 220 GHz extended interaction klystron

1.
Institute of Electronics, Chinese Academy of Sciences, Beijing 101400, China
2.
Graduate University of Chinese Academy of Sciences, Beijing 100039, China

摘要

摘要: 对一种基于双排矩形波导慢波结构(SDRWS) 结构的3腔EIK进行了详细计算机模拟计算, 通过对基于SDRWS结构的EIK用输入输出腔的S11的模拟计算及对分布作用速调管用中间腔的本征频率的模拟计算, 初步确定了EIK用输入输出腔及中间腔的结构参数, 进而对EIK进行了PIC互作用模拟计算, 结果表明: 该EIK的3dB工作频带为219.5~220.5GHz, 3dB带宽为1GHz, 最大功率为456 W, 最大增益为40.06dB。在此基础上, 通过调整中间腔的波导头宽度以进行参差调谐, 用PIC互作用模型模拟计算研究了中间腔谐振频率对EIK整体性能的影响。结果表明, EIK的3dB工作频带主要由输入输出腔的通频带决定, 而中间腔的谐振频率也具有重要影响。当中间腔的谐振频率分别处于输入输出腔的通频带的低频端或高频端时, 可以使EIK的3dB工作频带向低频端或高频端得到一定程度展宽; 当中间腔的谐振频率高于输入输出腔的通频带的高频端时, EIK的增益在其3dB工作频带内较为平坦, EIK的输出信号在其3dB工作频带内比较稳定, 频谱的纯净程度较好。参差调谐的最终结果表明, 当中间腔的波导头宽度为0.747mm时, EIK获得了接近最优的性能, 3dB工作频带为219.5~220.0GHz, 3dB带宽扩展到1.2GHz, 最大功率为630W, 相应的最大电子效率为11.3%, 最大增益为47dB。
- 分布作用速调管 /
- 参差调谐 /
- 双排矩形波导慢波结构 /
- 宽频带 /
- PIC模拟
Abstract: An extended interaction klystron (EIK), which is composed of an input cavity and an output cavity both based on 8 periods of staggered double rectangular waveguide structure (SDRWS) and an intermediate cavity based on 6 periods of SDRWS, is calculated in detail on computer.After calculating reflection coefficient S11 of the input cavity and output cavity and the eigenmodes of the intermediate cavity, the structural parameters of the input cavity and output cavity and the intermediate cavity are determined, then PIC simulation is done to predict the EIK's performance, the results show that the EIK has an 1 GHz 3 dB bandwidth (219.5-220.5 GHz), a 456 W maximum power and a 40.06 dB maximum gain.Furthermore, stagger tuning by adjusting the structural parameter aof the intermediate cavity is performed to analyse howaaffects the EIK's performances, and the results show that the 3 dB band of the EIK mainly depends on the passband of the input cavity and output cavity, it also depends on the resonant frequency of the intermediate cavity in some cases.When the resonant frequency of the intermediate cavity is located at the lower or higher ends of the passband of the input cavity and output cavity, the 3 dB band of the EIK may be extended to certain extent.Particularly, when the resonant frequency of the intermediate cavity is located at or beyond the higher ends of the passband of the input cavity and output cavity, it is verified that the EIK has steady output signal featuring with pure spectrum and flat gains over the 3 dB band.The final results of the stagger tuning show that, when the structural parameter aof the intermediate cavity is 0.747 mm, the EIK reaches almost the optimum performances, with an 1.2 GHz3 dB bandwidth (219.5-220.7 GHz), a 630 W maximum power companied with a 11.3%efficiency, and a 47 dB maximum gain.
- extended interaction klystron /
- stagger tuning /
- staggered double rectangular waveguide structure /
- broadband /
- PIC simulation

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图 1 220 GHz EIK的输入输出腔和中间腔的计算模型及相关计算结果

Figure 1. Model and calculated results of the input/output cavities and the intermediate cavity for a 220 GHz extended interaction klystron (EIK)

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图 2 3腔EIK的PIC计算模型和计算结果

Figure 2. PIC model for calculating the interaction of the 3-cavity EIK and calculated results

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图 3 3腔EIK的输出功率和增益与中间腔结构参数a依赖关系的PIC计算结果

Figure 3. Calculated output powers and gains of the 3-cavity EIK which depend on the size a in the intermediate cavity

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图 4 3腔EIK在中间腔的结构参数a取0.747 mm和0.750 mm时的归一化电压信号及其傅里叶变换

Figure 4. Normalized voltage v₀ and FFT of v₀ of the EIK when size a in the intermediate cavity is 0.747 mm or 0.750 mm

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图 5 腔EIK在中间腔的结构参数a取0.744 mm和0.753 mm时的归一化电压信号及其傅里叶变换

Figure 5. Normalized voltage v₀ and FFT of v₀ of the EIK when size a in the intermediate cavity is 0.744 mm or 0.753 mm

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表 1 初步选取的慢波结构参数

Table 1. Structural parameters of staggered double rectangular waveguide structure (SDRWS)

a/mm	b/mm	p/mm	t/mm	r/mm
0.744	0.32	0.33	0.11	0.09

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表 2 中间腔本征频率与结构参数a的依赖关系

Table 2. Eigenmode frequencies of the intermediate cavity vs a

a/mm	f/GHz	a/mm	f/GHz	a/mm	f/GHz
0.741	223.513 6	0.747	221.590 4	0.753	219.701 2
0.744	222.547 7	0.750	220.641 7	0.756	218.769 1

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表 3 中间腔的结构参数a对EIK性能的影响

Table 3. Effects on EIK performances of the size a in the intermediate cavity

a/mm	P_max/W	f_Pmax/GHz	G_max/dB	f_Gmax/GHz	w_{3 dB}/GHz
0.741	364.5	220.0	39.08	220.0	219.5~220.5
0.744	456.0	220.0	40.06	220.0	219.5~220.5
0.747	630.1	220.4	47.02	220.4	219.5~220.7
0.750	423.2	220.0	51.31	219.6	219.2~220.3
0.753	348.4	219.8	38.89	219.8	219.2~220.1
0.756	188.1	219.8	36.20	219.8	219.2~220.0

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表 4 中间腔在具有电子注条件下的谐振频率与其结构参数a的依赖关系

Table 4. Resonant frequency of the intermediate cavity with beam changes with a

a/mm	f/GHz	a/mm	f/GHz	a/mm	f/GHz
0.741	222.513 6	0.747	220.59	0.753	218.701 2
0.744	221.547 7	0.750	219.69	0.756	217.769 1

下载: 导出CSV

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