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典型音频放大电路的电源电磁干扰效应研究

柴梦娟 余道杰 胡俊杰 贺凯 赵铜城 周东方

柴梦娟, 余道杰, 胡俊杰, 等. 典型音频放大电路的电源电磁干扰效应研究[J]. 强激光与粒子束, 2019, 31: 040014. doi: 10.11884/HPLPB201931.180366
引用本文: 柴梦娟, 余道杰, 胡俊杰, 等. 典型音频放大电路的电源电磁干扰效应研究[J]. 强激光与粒子束, 2019, 31: 040014. doi: 10.11884/HPLPB201931.180366
Chai Mengjuan, Yu Daojie, Hu Junjie, et al. Electromagnetic interference effect of power supply in typical audio amplifier circuit[J]. High Power Laser and Particle Beams, 2019, 31: 040014. doi: 10.11884/HPLPB201931.180366
Citation: Chai Mengjuan, Yu Daojie, Hu Junjie, et al. Electromagnetic interference effect of power supply in typical audio amplifier circuit[J]. High Power Laser and Particle Beams, 2019, 31: 040014. doi: 10.11884/HPLPB201931.180366

典型音频放大电路的电源电磁干扰效应研究

doi: 10.11884/HPLPB201931.180366
基金项目: 

国家自然科学基金项目 61871405

详细信息
    作者简介:

    柴梦娟(1993—),女,硕士,从事电磁信息安全与高功率微波技术研究;814215370@qq.com

    通讯作者:

    余道杰(1978—),男,博士生导师,主要从事高功率微波技术研究;ydj2008@126.com

  • 中图分类号: TN972

Electromagnetic interference effect of power supply in typical audio amplifier circuit

  • 摘要: 选取一种典型的音频功率放大电路,采用直接功率注入法研究了音频功放电源的电磁干扰效应。分析了电路的电磁干扰耦合机理,设计了基于直接功率注入法的电源电磁干扰测试平台,测试得到0.1~1 GHz电磁干扰对音频放大电路直流电源的干扰效果数据,得出临界失真、典型失真和完全失真三种状态下的功率阈值与干扰频率规律曲线。结果表明:测试频段内,三种失真状态下的失真功率阈值随频率的变化关系一致,失真功率阈值相差约2 dBm。当注入干扰的频率较低时(100~300 MHz),失真功率阈值较高,且随频率增大近似以幂函数趋势下降;当注入干扰频率高于300 MHz时,失真功率阈值随频率增大呈减幅振荡趋势。
  • 图  1  LM386内部等效电路原理图

    Figure  1.  Schematic of LM386 internal equivalent circuit

    图  2  LM386音频测试电路板实物图

    Figure  2.  LM386 audio test circuit board

    图  3  LM386音频放大电路电源电磁干扰效应测试电路图

    Figure  3.  EMI effect test diagram for power supply of LM386 audio amplifier circuit

    图  4  LM386音频放大电路电源电磁干扰效应测试原理图

    Figure  4.  DPI test schematic for power supply's EMI effect of LM386 audio amplifier circuit

    图  5  音频放大电路电源电磁干扰注入实验实际测试平台

    Figure  5.  Actual test platform for EMI injection experiment of audio amplifier circuit

    图  6  音频放大电路电源电磁干扰效应测试流程

    Figure  6.  Flowchart of power supply's EMI effect injection experiment for audio amplifier circuit

    图  7  音频放大电路电磁干扰效应信号波形图

    Figure  7.  Signal waveforms for audio amplifier circuit's EMI effect

    图  8  三种状态下失真功率阈值P随干扰频率f变化曲线

    Figure  8.  Curve of distortion power threshold P with interference frequency f in three states

    表  1  公式中的系数及拟合精度

    Table  1.   Coefficient in formula and fitting accuracy

    i ai bi ci R2
    critical distortion 1 1.002×104 -1.778 4.391 0.7876
    typical distortion 2 1.9×105 -2.279 6.785 0.8216
    full distortion 3 5631 -1.54 8.612 0.7975
    下载: 导出CSV
  • [1] 蒙林, 李天明, 李浩. 国外高功率微波发展综述[J]. 真空电子技术, 2015(2): 8-12. https://www.cnki.com.cn/Article/CJFDTOTAL-ZKDJ201502002.htm

    Meng Lin, Li Tianming, Li Hao. Developments of high power microwave abroad. Vacuum Electronics, 2015(2): 8-12 https://www.cnki.com.cn/Article/CJFDTOTAL-ZKDJ201502002.htm
    [2] 钱宝良. 国外高功率微波技术的研究现状与发展趋势[J]. 真空电子技术, 2015(2): 2-7. https://www.cnki.com.cn/Article/CJFDTOTAL-ZKDJ201502001.htm

    Qian Baoliang. The research status and developing tendency of high power microwave technology in foreign countries. Vacuum Electronics, 2015(2): 2-7 https://www.cnki.com.cn/Article/CJFDTOTAL-ZKDJ201502001.htm
    [3] 席晓文, 柴常春, 刘阳, 等. 外界条件在电磁脉冲对GaAs赝高电子迁移率晶体管损伤过程中的影响[J]. 物理学报, 2017, 66: 078401. doi: 10.7498/aps.66.078401

    Xi Xiaowen, Chai Changchun, Liu Yang, et al. Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse. Acta Physica Sinica, 2017, 66: 078401 doi: 10.7498/aps.66.078401
    [4] 马振洋. 双极晶体管微波损伤效应与机理研究[D]. 西安: 西安电子科技大学, 2013.

    Ma Zhenyang. Research on the damage effect and mechanism of bipolar transistor caused by microwaves. Xi'an: Xidian University, 2013
    [5] Zhou L, Zheng W S, Hua Y J, et al. Investigation on failure mechanisms of GaN HEMT caused by high-power microwave(HPM) pulses[J]. IEEE Trans Electromagnetic Compatibility, 2017, 99: 1-8.
    [6] Zhou L, San Z W, Lin L, et al. Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses[C]//IEEE Asia-Pacific International Symposium on Electromagnetic Compatibility. 2016: 642-644.
    [7] 程笑林. 场效应管瞬态电热特性的谱元法分析[D]. 南京: 南京理工大学, 2015.

    Cheng Xiaolin. Analysis of FET's transient electrothermal characteristics by spectral element method. Nanjing: Nanjing University of Science & Technology, 2015
    [8] 陈杰, 杜正伟. CMOS反相器的电磁干扰频率效应[J]. 强激光与粒子束, 2012, 24(1): 147-151 http://www.hplpb.com.cn/article/id/5832

    Chen Jie, Du Zhengwei. Effect of electromagnetic interference frequency on CMOS inverters. High Power Laser and Particle Beams, 2012, 24(1): 147-151. http://www.hplpb.com.cn/article/id/5832
    [9] Yi S, Du Z. The influence of microwave pulse width on the thermal burnout effect of an LNA constructed by a GaAs PHEMT[J]. Microelectronics Reliability, 2018, 85(1): 140-147.
    [10] 胡凯, 李天明, 汪海洋, 等. 多级PIN限幅器高功率微波效应研究[J]. 强激光与粒子束, 2014, 26: 063015. doi: 10.11884/HPLPB201426.063015

    Hu Kai, Li Tianming, Wang Hai, et al. High power microwave effect of multi-stage PIN limiter. High Power Laser and Particle Beams, 2014, 26: 063015 doi: 10.11884/HPLPB201426.063015
    [11] Redouté J M, Steyaert M. EMC of analog integrated circuits[C]//Analog Circuits & Signal Processing. 2010.
    [12] Fiori F. EMI-induced distortion of baseband signals in current feedback instrumentation amplifiers[J]. IEEE Trans Electromagnetic Compatibility, 2018, 99: 1-8.
    [13] Fermi U, Fiumara A, Rossi G. An innovative mathematical model of RF-induced quiescent point shift in a BJT[J]. IEEE Trans Electromagnetic Compatibility, 1996, 38(3): 244-249.
    [14] Richardson RE. Quiescent operating point shift in bipolar transistors with AC excitation[J]. IEEE Journal of Solid-State Circuits, 1980, 14(6): 1087-1094.
    [15] Richardson R E. Modeling of low-level rectification RFI in bipolar circuitry[J]. IEEE Trans Electromagnetic Compatibility, 1979, 21(4): 307-311.
    [16] IEC 62132-4, IC's measurement of E/M immunity 150 kHz to 1 GHz—Part 4: Direct RF power injection method[S].
    [17] 王长河. 高功率微波和电磁脉冲对半导体器件辐射损伤的研究[J]. 微纳电子技术, 1997, 34(1): 9-16. https://www.cnki.com.cn/Article/CJFDTOTAL-BDTQ199701002.htm

    Wang Changhe. Study on the effect of HPM and EMP radiation damage on semiconductor devices. Micronanoelectronic Technology, 1997, 34(1): 9-16 https://www.cnki.com.cn/Article/CJFDTOTAL-BDTQ199701002.htm
    [18] 刘波. 半导体器件的高功率微波毁伤阈值数值计算研究[D]. 成都: 电子科技大学, 2004: 19.

    Liu Bo. Numerical calculation of high power microwave damage threshold for semiconductor devices. Chengdu: University of Electronic Science and Technology of China, 2004: 19
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出版历程
  • 收稿日期:  2018-12-17
  • 修回日期:  2019-03-01
  • 刊出日期:  2019-04-15

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