全固态高压脉冲电源在半导体光刻光源中的应用

游利兵; 程超; 方晓东

doi:10.11884/HPLPB201931.190001

全固态高压脉冲电源在半导体光刻光源中的应用

doi: 10.11884/HPLPB201931.190001

游利兵^1,,
程超^{1, 2},
方晓东^{1, 2}

1.
中国科学院安徽光学精密机械研究所, 光子器件与材料安徽省重点实验室, 合肥 230031
2.
中国科学技术大学科学岛分院, 合肥 230026

基金项目:

国家科技重大专项 2013ZX02202004

详细信息

作者简介:
游利兵(1981-)，男，博士，研究员，主要从事激光技术、电源技术方面的研究；lbyou@aiofm.ac.cn

中图分类号: TN86;TN248
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- 被引次数: 0
出版历程
- 收稿日期: 2019-01-01
- 修回日期: 2019-02-20
- 刊出日期: 2019-04-15

Application of all-solid-state high-voltage pulse power supply in semiconductor lithography light source

You Libing^1
,,
Cheng Chao^{1, 2},
Fang Xiaodong^{1, 2}

1.
Anhui Provincial Key Laboratory of Photonics Devices and Materials, Anhui Institute of Optics and Fine Mechanics of Chinese Academy of Sciences, Hefei 230031, China
2.
School of Science Island, University of Science and Technology of China, Hefei 230026, China

摘要

摘要: 简要回顾了半导体光刻的发展历程以及准分子激光作为光源在半导体光刻中的需求。简述了高压脉冲电源的基本原理及应用，介绍了全固态高压脉冲电源的结构和特点。着重阐述了全固态高压脉冲电源在光刻用准分子激光器和EUV光源中的应用。大功率半导体开关结合多级磁脉冲压缩开关的全固态脉冲电源有效替代传统基于闸流管的高压脉冲电源，实现了光刻光源高重复频率下的长寿命运行。介绍了中国科学院安徽光学精密机械研究所近十年来，在准分子激光器的全固态高压脉冲电源研究上的相关进展。最后，对未来半导体光刻光源对全固态脉冲电源的需求进行了展望。
- 全固态高压脉冲电源 /
- 半导体光刻 /
- 准分子激光 /
- 磁开关 /
- 闸流管
Abstract: The basic principle and application of high-voltage pulse power supply are briefly described, the principle and characteristics of all-solid-state high-voltage pulse power supply are introduced. The history of semiconductor lithography and the need for excimer lasers as light sources in semiconductor lithography are reviewed. The application of all-solid-state high-voltage pulse power supply in excimer laser for lithography is emphasized. The high-power semiconductor switch combined with multi-stage magnetic pulse compression switch is used to replace the traditional thyristor-based high-voltage pulse power supply, and a long life operation of the excimer laser at a high repetition rate is achieved. The progress of the research on the all-solid-state high-voltage pulse power supply of excimer lasers in the past ten years of Anhui Institute of Optics and Fine Mechanics of Chinese Academy of Sciences is also introduced. Finally, the future demand for all-solid-state pulsed power sources for semiconductor lithography sources is expected.
- all-solid-state high-voltage pulse power supply /
- semiconductor lithography /
- excimer laser /
- magnetic switch /
- thyratron

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图 1 全固态脉冲电源示意图

Figure 1. Simplified circuit schematic of the all solid state pulsed power supply

下载: 全尺寸图片幻灯片

图 3 典型三级磁脉冲压缩电路中的电容电压波形

Figure 3. Typical capacitor voltage waveforms of a three stage magnetic pulse compression circuit

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图 4 MOPA结构示意图

Figure 4. Schematic diagram of the MOPA architecture(Cymer, Inc)

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图 5 MOPRA结构示意图

Figure 5. Schematic diagram of the MOPRA architecture (Cymer, Inc)

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图 6 Cymer公司双腔结构全固态脉冲电源系统示意图

Figure 6. Schematic diagram of Cymer's double-cavity all-solid-state pulse power system

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图 7 基于激光(左)或放电(右)产生锡等离子体光刻应用的EUV源

Figure 7. EUV sources for lithography applications based on laser- (left) or discharge-produced (right) plasmas of tin

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图 8 XTREME技术公司XTS 13-35样机

Figure 8. XTREME Technology Company XTS 13-35 prototype

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图 9 DPP EUV用全固态脉冲电源

Figure 9. All-solid-state pulse power supply for DPP EUV

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图 10 Ushio公司DPP EUV用全固态脉冲电源示意图

Figure 10. Schematic diagram of Ushio's all-solid-state pulse power supply for DPP EUV

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图 11 哈尔滨工业大学DPP EUV用全固态脉冲电源示意图

Figure 11. Schematic diagram of HIT's all-solid pulse power supply for DPP EUV

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图 12 全固态脉冲激励电路示意图

Figure 12. Simplified circuit schematic of SSPPM

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12 实验测得电容器电压波形

12. Measured voltage waveforms on capacitors

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图 13 全固态脉冲电源主回路

Figure 13. Simplified circuit schematic of all-solid-state pulsed power supply

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图 14 水冷循环保护系统示意图

Figure 14. Schematic diagram of water-cooling loop to protect system

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图 15 实验测得电容器电压波形

Figure 15. Measured voltage waveforms on capacitors

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图 16 双腔结构的全固态脉冲电源

Figure 16. All-solid-state pulse power supply with double cavity structure

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图 17 实验结果

Figure 17. Experimental results

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表 1 可控硅主要参数列表

Table 1. Parameters for silicon controlled rectifier

V_DRM /V	V_RRM /V	I_T(AV)(T_hs55 ℃) /A	t_q(100 ℃) /μs	I_TSM(10 ms) /kA	(dV/dt) /(V·μs^－1)	(di/dt) /(A·μs^－1)	I_DRM /mA	I_RRM /mA
2500	2500	2500	35~70	27	500	600	200	200

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表 2 磁开关设计参数列表

Table 2. Design parameters for magnetic switches

	material	B_s/T	ΔB/T	total cross section/cm²	magnetic length/cm	number of turns
first stage	1K101	1.56	2.7	11.25	20.4	26
second stage	1K107	1.25	2.1	7.2	16.4	6
third stage	1K107	1.25	2.1	2.4	16.4	4

下载: 导出CSV

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