HEPS在轴注入冲击器系统及快脉冲电源样机研制

陈锦晖; 王磊; 施华; 霍丽华; 王冠文; 刘鹏; 史晓蕾

doi:10.11884/HPLPB201931.190007

HEPS在轴注入冲击器系统及快脉冲电源样机研制

doi: 10.11884/HPLPB201931.190007

陈锦晖^{1, 2,},
王磊²,
施华²,
霍丽华²,
王冠文²,
刘鹏^{1, 2},
史晓蕾¹

1.
中国科学院大学核科学与技术学院, 北京 100049
2.
中国科学院高能物理研究所加速器中心, 北京 100049

基金项目:

国家自然科学基金项目 11675194

国家自然科学基金项目 11475200

科技部国家重点研发计划项目 2016YFA0402002

详细信息

作者简介:
陈锦晖(1976-), 男，研究员，从事加速器注入引出技术研究；chenjh@ihep.ac.cn

中图分类号: TL501
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出版历程
- 收稿日期: 2019-01-09
- 修回日期: 2019-03-14
- 刊出日期: 2019-04-15

Application of fast pulsed power supply to high energy photon source

Chen Jinhui^{1, 2
,},
Wang Lei²,
Shi Hua²,
Huo Lihua²,
Wang Guanwen²,
Liu Peng^{1, 2},
Shi Xiaolei¹

1.
School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
2.
Accelerator Division, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

摘要

摘要: 高能同步辐射光源(HEPS)是我国计划建造的下一代基于储存环的高亮度光源，束流自然发射度已经接近衍射极限。作为典型的低发射度储存环(LER)，HEPS的动力学孔径远小于物理孔径，传统的离轴累积注入已经无法满足要求，只能采用基于strip-line kicker的在轴注入方案。为了实现逐束团操控，HEPS要求注入kicker脉冲电源底宽(3%~3%) < 10 ns，半高宽(50%~50%)>4.5 ns，幅度>±17.5 kV(50 Ω负载)，重复频率>50 Hz。高能同步辐射光源验证装置(HEPS-TF)工程研制了一台基于DSRD的双极性快脉冲电源性能样机，在50 Ω负载上可以获得上升时间(10%~90%) < 2.6 ns，下降时间(90%~10%) < 3.2 ns，半高宽(50%~50%)>5 ns，底宽(3%~3%) < 10 ns，幅度>±18 kV的脉冲高压，可以满足HEPS注入基准方案——在轴置换注入的要求。
- HEPS /
- 衍射极限光源 /
- 注入引出 /
- 在轴注入 /
- 带状线冲击器 /
- 快脉冲电源 /
- DSRD
Abstract: High Energy Photon Source (HEPS) is the next generation of high-brightness photon source based on storage ring planned in China. Its natural emittance of the beam is close to the diffraction limit. As a typical low emittance storage ring (LER), the dynamic aperture of HEPS is far smaller than the physical aperture. Hence the traditional off-axis cumulative injection can not meet the requirements, and only strip-line kicker based on in-line injection scheme can be used. In order to realize bunch-by-bunch control, HEPS requires injecting kicker electrical pulse with a bottom width (3%-3%) of less than 10 ns, a half width (50%-50%) of more than 4.5 ns, an amplitude of >+17.5 kV (50 Ω load) and a repetition frequency of more than 50 Hz. A prototype of bipolar fast pulsed power supply based on DSRD has been developed on the project of HEPS-TF. The performance of the prototype can produce a pulse at 50 Ω load with rise time (10%-90%) < 2.6 ns, fall time (90%-10%) < 3.2 ns, FWHM (50%-50%) > 5 ns, bottom width (3%-3%) < 10 ns, amplitude >18 kV. It can meet the requirement of on-axis swap-out injection which is the baseline injection scheme of HEPS.
- HEPS /
- DLSR /
- injection and extraction /
- on-axis injection /
- strip-line kicker /
- fast pulser /
- DSRD

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图 1 HEPS加速器整体布局

Figure 1. Layout of HEPS accelerator

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图 2 HEPS储存环注入引出系统布局

Figure 2. Layout of HEPS storage ring injection and extraction system

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图 3 束团间距、带状线冲击器长度、电脉冲宽度和偏转量的关系

Figure 3. Relationship among bunch spacing, kicker length and pulse width

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图 4 注入引出kicker系统组成

Figure 4. Injection and extraction kicker system

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图 5 典型DSRD脉冲源线路模型及仿真结果

Figure 5. Schematic and simulation result of typical DSRD pulser circuit

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图 6 DSRD脉冲电源样机电路原理图

Figure 6. Schematic of DSRD pulser prototype

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图 7 双极性输出DSRD脉冲电源电路

Figure 7. Schematic of bipolar output DSRD pulser

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图 8 DSRD脉冲电源结构

Figure 8. DSRD pulser structure

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图 9 DSRD组件

Figure 9. DSRD assembly

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图 10 DSRD脉冲电源样机及测试结果

Figure 10. DSRD pulser prototype and testing result

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表 1 HEPS注入引出strip-line kicker脉冲电源设计指标

Table 1. HEPS injection and extraction strip-line kicker pulser design

parameters	value
load impedance	50 Ω
pulse FWHM(50%~50%)	>4.5 ns
pulse bottom width(3%~3%)	< 10 ns
amplitude of pulse	±17.5 kV
pulse peak reproducibility(p-p)	< ±1.5%
pulse residual voltage	< 3%
pulse repeat rate, CW	50 Hz
pulse burst rate	50
jitter trigger to output	0.1 ns

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