高功率半导体激光器倍频实现紫外光输出

基金项目:

国家自然科学基金项目 61875198

军委装备发展部领域基金项目 61404140107

Second harmonic generation of ultraviolet laser based on high power laser diode array

1.
Department of High Power Gas Laser, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China
2.
School of Electronic, Electronical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

摘要: 采用中心波长780 nm、线宽0.13 nm的体布拉格光栅外腔半导体激光作为基频光，基于Ⅰ类相位匹配的三硼酸锂晶体(LBO)，获得了中心波长为390 nm的倍频光输出，输出功率30 μW，转换效率0.01%，为高功率紫外光束的实现提供了新的技术路线。
- 半导体激光器 /
- 倍频 /
- 紫外光 /
- 高功率
Abstract: A 780 nm continuous-wave, which is output by extra-cavity semiconductor laser with a bulk bragg grating, is used as the fundamental input light source of the Second Harmonic Generation (SHG) system. Line width of the fundamental light is 0.13 nm. Based on the type Ⅰ phase-matching and Lithium Triborate (LBO) crystal, 390 nm second harmonic is obtained. The emitted average output power is 30 μW (SHG efficiency is 0.01%). We provide a new technical route for the achievement of high-power UV beams.
- laser diode /
- second harmonic generation /
- ultraviolet light laser /
- high power

图 1 倍频装置示意图

Figure 1. Experimental setup of SHG

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图 2 基频光光束

Figure 2. Fundamental wave

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图 3 倍频光光谱图

Figure 3. Spectrum of SHG

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图 4 倍频光光斑和倍频光2维空间能量分布图

Figure 4. Spot of SHG and 2D energy distribution image of SHG spot

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