宽禁带碳化硅单晶衬底及器件研究进展

肖龙飞; 徐现刚

doi:10.11884/HPLPB201931.190043

宽禁带碳化硅单晶衬底及器件研究进展

doi: 10.11884/HPLPB201931.190043

肖龙飞,
徐现刚^,

山东大学晶体材料国家重点实验室, 济南 250100

基金项目:

国家重点研发计划项目 2016YFB0400401

山东大学基本科研项目 2016JC037

山东大学基本科研项目 2018JCG01

山东省重点研发项目 2017CXGC0412

烟台“十三五”海洋经济创新发展示范项目 YHCX-ZB-L-201703

详细信息

作者简介:
肖龙飞(1989-), 男，博士，从事半导体器件研究；xiaolongfeixlf@163.com

通讯作者:
徐现刚(1965-), 男，博士，教授，从事碳化硅材料生长、激光二极管制备等相关研究；xxu@sdu.edu.cn

中图分类号: TN304.24; TN305
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- 被引次数: 0
出版历程
- 收稿日期: 2019-02-09
- 修回日期: 2019-03-01
- 刊出日期: 2019-04-15

Recent development of wide bandgap semiconductor SiC substrates and device

Xiao Longfei,
Xu Xiangang^,

The State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

摘要

摘要: 碳化硅作为第三代宽禁带半导体的核心材料之一，相对于传统的硅和砷化镓等半导体材料，具有禁带宽度大、载流子饱和迁移速度高，热导率高、临界击穿、场强高等诸多优异的性质。基于这些优良的特性，碳化硅材料是制备高温电子器件、高频大功率器件的理想材料。近年来在碳化硅材料生长和器件制备方面取得重大进展，对碳化硅材料特性和生长方法进行回顾，并研究了碳化硅光导开关偏压、触发能量、导通电流之间的关系，以及开关失效情况下电极表面的损伤情况。
- 碳化硅 /
- 物理气相传输法 /
- 功率器件 /
- 光导开关 /
- 器件失效
Abstract: As a key representative material for the third-generation wide bandgap semiconductors, silicon carbide (SiC) is a promising wide band gap semiconductor material and can be used for the fabrication of high-power and high-frequency electronics, due to its superior physical properties, such as high thermal conductivity, wide band gap and high critical breakdown field. In recent years, bulk growth of SiC single crystals and the fabrication of devices have made significant progress. The paper introduces the growth techniques for SiC bulk and presents the relationship between the on-state resistance and voltage or laser energy. It also analyses the failure of devices.
- silicon carbide /
- physical vapor transport method /
- power device /
- photoconductive semiconductor switch /
- device failure

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图 1 不同构型的SiC单晶的硅碳双原子层排列顺序

Figure 1. Stacking sequence of double atomic layers of different SiC polytypes

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图 2 碳化硅单晶生长示意图

Figure 2. Schematic of SiC growth geometry models

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图 3 Cree公司SiC产品：8 inch试样

Figure 3. SiC substrates made by Cree: 8inch wafer

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图 4 山东大学6 inch SiC单晶及衬底

Figure 4. 6 inch SiC single crystal and substrate grown by Shandong University

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图 5 电流值随不同偏置电压的变化

Figure 5. Current value with different bias voltage

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图 6 电流值随不同激光能量的变化

Figure 6. Current value with different laser energy

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图 7 器件寿命图

Figure 7. Device lifetime diagram

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图 8 PCSS失效形貌图

Figure 8. Images of cracks in the failed PCSS

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表 1 SiC与Si和GaAs的物理特性参数比较

Table 1. Properties comparison between Si, GaAs and SiC

material	band gap/eV	dielectric constant	breakdown field/(MV·cm^-1)	saturated electron drift velocity/(cm·s^-1)	intrinsic carrier concentration/cm^-3	electron mobility/(cm²·V·s^-1)	thermal conductivity/(W·cm^-1·K^-1)
Si	1.12	11.8	0.3	1.0×10⁷	1.5×10¹⁰	1400	1.50
GaAs	1.43	12.8	0.6	1.0×10⁷	1.8×10⁶	8500	0.46
6H-SiC	3.03	9.6	3.2	2.0×10⁷	2.3×10^-6	400	4.90
4H-SiC	3.26	9.7	3.0	2.0×10⁷	8.2×10^-9	1140	4.90

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参考文献(23)

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