Experimental study on multi-channel synchronous conduction conditions of GaAs-PCSS
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摘要: 砷化镓光导开关（GaAs-PCSS）是具有快响应、高重频、低抖动、高功率容量的半导体光电导开关，多通道设计能够有效降低GaAs-PCSS非线性大电流导通时的损伤，提高开关寿命。为探究GaAs-PCSS多通道同步导通的必要条件，在基于固态脉冲形成线的实验平台上，通过特殊设计的夹具，将多枚GaAs-PCSS并联连接以作为脉冲形成电路的开关，以对各GaAs-PCSS施以不同的触发信号进行测试。实验结果证明：相同触发信号下，开关导通电流被成功地均分到4个GaAs-PCSS通道中；不同触发信号下，为获得较好的电流均分效果，各通道触发延迟时差须小于1 ns，触发能量差须小于20 μJ。设计了分体式、单体式两种结构的多通道GaAs-PCSS，其中基于刻蚀工艺的单体式20通道GaAs-PCSS在7 000余次大电流工作后仅发生轻微损伤。Abstract: Gallium Arsenide Photoconductive Semiconductor Switch (GaAs-PCSS) has outstanding features, such as, fast response, high repetition, low jitter and high-power capacity. Multi-channel design can effectively reduce the damage from high current in nonlinear mode and improve switch’s lifetime. In this paper, on the solid-state pulse forming line experimental platform, multiple GaAs-PCSSs are connected in parallel as one switch through a special fixture, and different trigger signals are applied to each of them, in order to study the necessary conditions for GaAs-PCSS multi-channel synchronous conduction. The results show that, firstly, by the same trigger signals, the on-current is successfully divided into 4 GaAs-PCSS channels; secondly, by different trigger signals, the delay time difference and trigger energy difference must be lower than 1 ns and 20 μJ respectively, if an effective current diversion is expected; thirdly, split and integrated multi-channel GaAs-PCSS structures are designed, and the integrated 20-channel GaAs-PCSS was slightly damaged after 7 000 shots.
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Key words:
- GaAs-PCSS /
- multi-channel /
- synchronous /
- trigger delay /
- trigger energy
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图 2 四GaAs-PCSS并联同步导通触发与测试平台
Figure 2. Experimental platform for 4 parallel GaAs-PCSS triggering test
图 3 各开关中导通电流测试结果
Figure 3. Conducting current of each PCSS when 1, 2, 3 or 4 PCSSs are triggered
图 4 各开关中导通电流百分比与触发能量或触发延迟时间差之间的关系
Figure 4. Percentage of conducting current of each PCSS when triggered at different laser energy or trigger time
图 5 分体式和单体式多通道GaAs-PCSS设计与照片
Figure 5. Designs and pictures of split and integrated multi-channel GaAs-PCSS
图 6 单体式20通道GaAs-PCSS的7 000余次导通波形累积图
Figure 6. Cumulative graph of load output waveforms (up) and bias voltage (down) of the integrated multi-channel GaAs-PCSS during 7 000 shots
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[1] Loubriel G M, Zutavern F J, Baca A G, et al. Photoconductive semiconductor switches[J]. IEEE Trans Plasma Sci, 1997, 25(2): 124-130. doi: 10.1109/27.602482 [2] Shi W, Tian L, Liu Z, et al. Accurate measurement of the jitter time of GaAs photoconductive semiconductor switches triggered by a one-to-two optical fiber[J]. Appl Phys Lett, 2013, 102: 154106. doi: 10.1063/1.4802755 [3] Yuan Jianqiang, Xie Weiping, Zhou Liangji, et al. Developments and applications of photoconductive semiconductor switches in pulsed power technology[J]. High Power Laser and Particle Beams, 2008, 20(1): 171-176. [4] Nunally W C. Critical component requirements for compact pulse power system architectures[J]. IEEE Trans Plasma Sci, 2005, 33(4): 1262-1267. doi: 10.1109/TPS.2005.852406 [5] Schoenberg J S H, Burger J W, Tyo J S, et al. Ultra-wideband source using gallium arsenide photoconductive semiconductor switches[J]. IEEE Trans Plasma Sci, 1997, 25(2): 327-334. doi: 10.1109/27.602507 [6] Nunally W C. High-power microwave generation using optically activated semiconductor switches[J]. IEEE Trans Electron Devices, 1990, 37(12): 2439-2448. doi: 10.1109/16.64516 [7] Liu Yi, Wang Wei, Shen Yi, et al. Lifetime of high-power GaAs photoconductive semiconductor switch triggered by laser of different power density[C]// Proc of SPIE. 2014: 92554G. [8] 施卫, 田立强. 半绝缘GaAs光电导开关的击穿特性[J]. 半导体学报, 2004, 25(6):691-696. (Shi Wei, Tian Liqiang. Breakdown characteristics of semi-insulating GaAs photoconductive switch[J]. Journal of Semiconductors, 2004, 25(6): 691-696 doi: 10.3321/j.issn:0253-4177.2004.06.015 [9] Loubriel G M, Zutavern F J, Mar A, et al. Longevity of optically activated, high gain GaAs photoconductive semiconductor switches[J]. IEEE Trans Plasma Science, 1998, 26(5): 1393-1402. doi: 10.1109/27.736024 [10] 杨宏春, 崔海娟, 孙云卿, 等. 高功率、长寿命GaAs光电导开关[J]. 科学通报, 2010, 55(13):1331-1337. (Yang Hongchun, Cui Haijuan, Sun Yunqin, et al. High power, longevity gallium arsenide photoconductive semiconductor switches[J]. Chinese Sci Bull, 2010, 55(13): 1331-1337 [11] Saiz T A, Zutavern F J, Glover S F, et al. PCSS lifetime testing for pulsed power applications[C]//Proc of 16th IEEE International Conference on Pulsed Power. 2007: 106-109. [12] Zutavern F J, Mar A, Vawter G A, et al. Multi-filament PCSS modules to replace high current pulsed power switches[C]//Proc of 19th IEEE International Conference on Pulsed Power. 2013: 1-6. -
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