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退火对EBE,IBS和ALD沉积HfO2薄膜的抗激光损伤性能影响

刘浩 马平 蒲云体 赵祖珍

刘浩, 马平, 蒲云体, 等. 退火对EBE,IBS和ALD沉积HfO2薄膜的抗激光损伤性能影响[J]. 强激光与粒子束, 2020, 32: 071002. doi: 10.11884/HPLPB202032.200006
引用本文: 刘浩, 马平, 蒲云体, 等. 退火对EBE,IBS和ALD沉积HfO2薄膜的抗激光损伤性能影响[J]. 强激光与粒子束, 2020, 32: 071002. doi: 10.11884/HPLPB202032.200006
Liu Hao, Ma Ping, Pu Yunti, et al. Impact of annealing on laser resistance of HfO2 films fabricated byALD, IBS and EBE techniques[J]. High Power Laser and Particle Beams, 2020, 32: 071002. doi: 10.11884/HPLPB202032.200006
Citation: Liu Hao, Ma Ping, Pu Yunti, et al. Impact of annealing on laser resistance of HfO2 films fabricated byALD, IBS and EBE techniques[J]. High Power Laser and Particle Beams, 2020, 32: 071002. doi: 10.11884/HPLPB202032.200006

退火对EBE,IBS和ALD沉积HfO2薄膜的抗激光损伤性能影响

doi: 10.11884/HPLPB202032.200006
基金项目: 深圳市科技计划基础研究面上项目(JCYJ20190807142405649)
详细信息
    作者简介:

    刘 浩(1986—),男,博士,助理研究员,从事激光薄膜研究;liuh@tsinghua-sz.org

  • 中图分类号: 0439

Impact of annealing on laser resistance of HfO2 films fabricated byALD, IBS and EBE techniques

  • 摘要: 结合自身实验条件采用电子束蒸发(EBE)、离子束溅射(IBS)和原子层沉积(ALD)三种工艺制备了HfO2薄膜,对其进行退火实验,采用1 064 nm Nd: YAG激光测定了即时沉积和退火后各HfO2薄膜的抗激光损伤能力。研究发现,ALD HfO2薄膜的激光损伤阈值最高,EBE HfO2薄膜次之,IBS HfO2薄膜的损伤阈值最低;300 ℃退火对各工艺薄膜抗激光损伤能力的影响均为负面,500 ℃退火则会显著降低ALD HfO2薄膜的抗激光损伤能力。
  • 图  1  离子束溅射和原子层沉积设备原理示意图

    Figure  1.  Schematic of the IBS and ALD equipments

    图  2  激光损伤阈值测试平台

    Figure  2.  Test benches for LIDT

    图  3  采用不同沉积方式制备的HfO2薄膜的色散

    Figure  3.  Dispersion of HfO2 films deposited by different techniques

    图  4  不同HfO2薄膜样品的0%激光损伤阈值

    Figure  4.  0% LIDT of different HfO2 films

    图  5  不同HfO2薄膜样品的激光损伤概率图

    Figure  5.  Laser damage probabilities of different HfO2 films

    图  6  500 ℃退火后ALD HfO2薄膜在10个脉冲和10 000个脉冲作用下的激光损伤概率

    Figure  6.  The laser damage probability of 500 ℃ annealed ALD HfO2 film irradiated by 10 pulses and 10 000 pulses

    图  7  激光损伤形貌图

    Figure  7.  Laser damage morphologies

    图  8  缺陷诱导激光损伤模型中的缺陷吸收率对局部温升的影响

    Figure  8.  Impact of defect on the local temperature in the defect-induced laser damage model

    表  1  不同退火温度的ALD HfO2薄膜的弱吸收

    Table  1.   The weak absorption of ALD HfO2 film annealed at different temperature

    sampleas-deposited/10−6300 ℃ annealed/10−6500 ℃ annealed/10−6
    ALD HfO2 film13.219.11 800
    下载: 导出CSV
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出版历程
  • 收稿日期:  2020-01-08
  • 修回日期:  2020-03-27
  • 刊出日期:  2020-06-24

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