氮离子注入对聚四氟乙烯表面电荷积聚和消散特性的影响

刘畅; 宋法伦; 朱明冬; 李春霞; 张北镇; 李飞; 王淦平; 龚海涛; 甘延青; 金晓

doi:10.11884/HPLPB202032.200045

氮离子注入对聚四氟乙烯表面电荷积聚和消散特性的影响

doi: 10.11884/HPLPB202032.200045

刘畅^{1, 2,},
宋法伦^1, ,,
朱明冬^{1, 3},
李春霞¹,
张北镇¹,
李飞¹,
王淦平¹,
龚海涛¹,
甘延青¹,
金晓¹

1.
中国工程物理研究院应用电子学研究所，高功率微波技术重点实验室，四川绵阳 621900
2.
中国工程物理研究院研究生院，北京 100088
3.
哈尔滨工业大学先进焊接与连接国家重点实验室，哈尔滨 150001

基金项目: 国家自然科学基金项目（51907182）；国家自然科学基金委员会与中国工程物理研究院联合基金项目（U1830129）

详细信息

作者简介:
刘畅（1994—），男，硕士研究生，从事射频等离子体注入技术研究；liuchang17@gscaep.ac.cn

通讯作者:
宋法伦（1977—），男，博士，研究员，主要从事脉冲功率技术及等离子体材料表面处理技术研究；songfalun@caep.cn

中图分类号: TM215.1
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- 被引次数: 0
出版历程
- 收稿日期: 2020-02-25
- 修回日期: 2020-04-22
- 刊出日期: 2020-06-24

Influence of nitrogen ion implantation on surface charge accumulation and dissipation of polytetrafluoroethylene

1.
Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China
2.
Graduate School of China Academy of Engineering Physics, Beijing 100088, China
3.
China State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China

摘要

摘要: 为了抑制聚四氟乙烯材料表面电荷积聚，采用射频产生氮等离子体对其表面进行等离子体浸没离子注入以改善其表面性能。对注入前后的聚四氟乙烯材料样品进行了X射线光电子能谱分析（XPS）、傅里叶红外光谱测试（FTIR）、水接触角测量、表面电阻率测量以及表面电位衰减测量，并基于等温表面电位衰减理论对其表面陷阱能级和密度分布进行了计算，以分析聚四氟乙烯样品经离子注入处理后其表面成分和物理性能的变化，并研究了这些变化对聚四氟乙烯样品表面电荷积聚和消散特性的影响。结果表明：氮离子注入后，聚四氟乙烯材料表面化学成分的主要变化是自身分子结构的破坏和转化，部分CF₂结构转变为CF和CF₃结构，导致样品表面陷阱能级变浅；水接触角升至140°左右，比未处理样品上升了约27°，表面电阻率降至3×10¹⁵ Ω，比未处理样品下降了两个数量级；表面电晕放电1 min后，经氮离子注入处理的聚四氟乙烯材料表面积聚电荷量减少，消散速度加快，这是因为表面陷阱能级变浅有利于表面电荷脱陷，同时表面电阻率降低也促进了表面电荷沿面传导的消散过程，聚四氟乙烯样品表面陷阱能级分布曲线也证实了这一论点。
- 聚四氟乙烯 /
- 氮离子注入 /
- 表面电荷 /
- 积聚消散 /
- 表面电阻率 /
- 表面陷阱特性
Abstract: To suppress the accumulation of charge on the surface of polytetrafluoroethylene (PTFE) material, radio frequency nitrogen plasma was generated to perform plasma immersion ion implantation (PIII) on the PTFE surface to improve its surface properties. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), water contact angle measurement, surface resistivity measurement and surface potential attenuation measurement were performed on the samples of PTFE material before and after injection to analyze the changes in surface composition and physical properties of PTFE samples after ion implantation treatment. Based on the theory of isothermal surface potential attenuation, the energy levels and density distributions of the surface traps were calculated. The results show that after nitrogen ion implantation, the main change in the chemical composition of the surface of the PTFE material is the destruction and conversion of its own molecular structure, and part of the CF₂ structure is transformed into the CF and CF₃ structures, resulting in shallower trap levels on the sample surface. The results also show that the water contact angle rose to about 140°, which is about 27° higher than that of the unprocessed sample. The surface resistivity drops to 3×10¹⁵ Ω, which is two orders of magnitude lower than that of the unprocessed samples. After 1 min of corona discharge on the surface, the amount of accumulated charge on the surface of the PTFE material processed with nitrogen ion implantation decreased, and the rate of dissipation increased. This is because the lower surface trap level is conducive to surface charge trapping, and the reduction in surface resistivity also promotes the dissipation process of surface charge along the surface. The curve of trap level distribution on the surface of PTFE sample also confirmed this.
- PTFE /
- nitrogen ion implantation /
- surface charge /
- accumulation and dissipation /
- surface resistivity /
- surface trap characteristics

HTML全文

图 1 等离子体浸没离子注入系统

Figure 1. Plasma immersion ion implantation system

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图 2 表面电位测量系统

Figure 2. Surface potential measurement system

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图 3 不同射频功率和处理时间下的PTFE样品XPS能谱

Figure 3. XPS energy spectra of PTFE samples at different RF power and different processing time

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图 4 部分PTFE样品C元素XPS能谱

Figure 4. XPS energy spectrum of element C of some PTFE samples

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图 5 部分PTFE样品N元素XPS能谱

Figure 5. XPS energy spectra of element N of some PTFE samples

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图 6 不同射频功率和处理时间下的PTFE样品FTIR光谱

Figure 6. FTIR spectra of PTFE samples under different RF power and processing time

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图 7 PTFE样品表面水接触角与射频功率和处理时间的关系

Figure 7. Relationship between water contact angle of PTFE sample surface，RF power，and processing time

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图 8 PTFE样品表面电阻率与射频功率和处理时间的关系

Figure 8. Relationship between surface resistivity of PTFE samples and RF power and processing time

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图 9 不同射频功率和处理时间下PTFE样品表面中心电位随时间的衰减曲线。

Figure 9. Decay curve of surface central potential with time for PTFE samples under different RF power and processing time

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图 10 归一化的不同射频功率和处理时间下PTFE样品表面中心电位随时间的衰减曲线

Figure 10. Normalized decay curve of surface center potential of PTFE samples with different RF power and processing time

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图 11 不同射频功率和处理时间下的PTFE样品表面陷阱能级分布曲线

Figure 11. Distribution curve of trap level on PTFE sample surface under different RF power and processing time

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表 1 离子注入处理前后PTFE样品表面C元素各状态含量比例

Table 1. Proportion of content of element C in PTFE sample surface before and after ion implantation

RF power/W	processing time/h	proportion/%
RF power/W	processing time/h	C	C＝O	CF	CF₂	CF₃
0	0	31.1	8.4	1.4	58.2	0.8
200	1	32.2	5.3	1.5	59.5	1.6
200	2	17.4	5.3	2.1	72.9	2.2
400	2	16.6	5.0	2.1	69.5	6.7

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表 2 不同射频功率和处理时间下的PTFE样品表面陷阱能级和密度

Table 2. Energy level and density of traps on the surface of PTFE samples under different RF power and processing time

RF power/W	processing time/h	surface trap level/eV	surface trap density/（10²⁰eV⁻¹·m⁻³）
0	0	0.756	9.82
200	1	0.754	9.19
200	2	0.755	8.56
400	2	0.735	7.04

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