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氮离子注入对聚四氟乙烯表面电荷积聚和消散特性的影响

刘畅 宋法伦 朱明冬 李春霞 张北镇 李飞 王淦平 龚海涛 甘延青 金晓

刘畅, 宋法伦, 朱明冬, 等. 氮离子注入对聚四氟乙烯表面电荷积聚和消散特性的影响[J]. 强激光与粒子束, 2020, 32: 075001. doi: 10.11884/HPLPB202032.200045
引用本文: 刘畅, 宋法伦, 朱明冬, 等. 氮离子注入对聚四氟乙烯表面电荷积聚和消散特性的影响[J]. 强激光与粒子束, 2020, 32: 075001. doi: 10.11884/HPLPB202032.200045
Liu Chang, Song Falun, Zhu Mingdong, et al. Influence of nitrogen ion implantation on surface charge accumulation and dissipation of polytetrafluoroethylene[J]. High Power Laser and Particle Beams, 2020, 32: 075001. doi: 10.11884/HPLPB202032.200045
Citation: Liu Chang, Song Falun, Zhu Mingdong, et al. Influence of nitrogen ion implantation on surface charge accumulation and dissipation of polytetrafluoroethylene[J]. High Power Laser and Particle Beams, 2020, 32: 075001. doi: 10.11884/HPLPB202032.200045

氮离子注入对聚四氟乙烯表面电荷积聚和消散特性的影响

doi: 10.11884/HPLPB202032.200045
基金项目: 国家自然科学基金项目(51907182);国家自然科学基金委员会与中国工程物理研究院联合基金项目(U1830129)
详细信息
    作者简介:

    刘 畅(1994—),男,硕士研究生,从事射频等离子体注入技术研究;liuchang17@gscaep.ac.cn

    通讯作者:

    宋法伦(1977—),男,博士,研究员,主要从事脉冲功率技术及等离子体材料表面处理技术研究;songfalun@caep.cn

  • 中图分类号: TM215.1

Influence of nitrogen ion implantation on surface charge accumulation and dissipation of polytetrafluoroethylene

  • 摘要: 为了抑制聚四氟乙烯材料表面电荷积聚,采用射频产生氮等离子体对其表面进行等离子体浸没离子注入以改善其表面性能。对注入前后的聚四氟乙烯材料样品进行了X射线光电子能谱分析(XPS)、傅里叶红外光谱测试(FTIR)、水接触角测量、表面电阻率测量以及表面电位衰减测量,并基于等温表面电位衰减理论对其表面陷阱能级和密度分布进行了计算,以分析聚四氟乙烯样品经离子注入处理后其表面成分和物理性能的变化,并研究了这些变化对聚四氟乙烯样品表面电荷积聚和消散特性的影响。结果表明:氮离子注入后,聚四氟乙烯材料表面化学成分的主要变化是自身分子结构的破坏和转化,部分CF2结构转变为CF和CF3结构,导致样品表面陷阱能级变浅;水接触角升至140°左右,比未处理样品上升了约27°,表面电阻率降至3×1015 Ω,比未处理样品下降了两个数量级;表面电晕放电1 min后,经氮离子注入处理的聚四氟乙烯材料表面积聚电荷量减少,消散速度加快,这是因为表面陷阱能级变浅有利于表面电荷脱陷,同时表面电阻率降低也促进了表面电荷沿面传导的消散过程,聚四氟乙烯样品表面陷阱能级分布曲线也证实了这一论点。
  • 图  1  等离子体浸没离子注入系统

    Figure  1.  Plasma immersion ion implantation system

    图  2  表面电位测量系统

    Figure  2.  Surface potential measurement system

    图  3  不同射频功率和处理时间下的PTFE样品XPS能谱

    Figure  3.  XPS energy spectra of PTFE samples at different RF power and different processing time

    图  4  部分PTFE样品C元素XPS能谱

    Figure  4.  XPS energy spectrum of element C of some PTFE samples

    图  5  部分PTFE样品N元素XPS能谱

    Figure  5.  XPS energy spectra of element N of some PTFE samples

    图  6  不同射频功率和处理时间下的PTFE样品FTIR光谱

    Figure  6.  FTIR spectra of PTFE samples under different RF power and processing time

    图  7  PTFE样品表面水接触角与射频功率和处理时间的关系

    Figure  7.  Relationship between water contact angle of PTFE sample surface,RF power,and processing time

    图  8  PTFE样品表面电阻率与射频功率和处理时间的关系

    Figure  8.  Relationship between surface resistivity of PTFE samples and RF power and processing time

    图  9  不同射频功率和处理时间下PTFE样品表面中心电位随时间的衰减曲线。

    Figure  9.  Decay curve of surface central potential with time for PTFE samples under different RF power and processing time

    图  10  归一化的不同射频功率和处理时间下PTFE样品表面中心电位随时间的衰减曲线

    Figure  10.  Normalized decay curve of surface center potential of PTFE samples with different RF power and processing time

    图  11  不同射频功率和处理时间下的PTFE样品表面陷阱能级分布曲线

    Figure  11.  Distribution curve of trap level on PTFE sample surface under different RF power and processing time

    表  1  离子注入处理前后PTFE样品表面C元素各状态含量比例

    Table  1.   Proportion of content of element C in PTFE sample surface before and after ion implantation

    RF power/Wprocessing time/hproportion/%
    CC=OCFCF2CF3
    0 0 31.1 8.4 1.4 58.2 0.8
    200 1 32.2 5.3 1.5 59.5 1.6
    200 2 17.4 5.3 2.1 72.9 2.2
    400 2 16.6 5.0 2.1 69.5 6.7
    下载: 导出CSV

    表  2  不同射频功率和处理时间下的PTFE样品表面陷阱能级和密度

    Table  2.   Energy level and density of traps on the surface of PTFE samples under different RF power and processing time

    RF power/Wprocessing time/hsurface trap level/eVsurface trap density/(1020 eV−1·m−3
    000.7569.82
    20010.7549.19
    20020.7558.56
    40020.7357.04
    下载: 导出CSV
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  • 收稿日期:  2020-02-25
  • 修回日期:  2020-04-22
  • 刊出日期:  2020-06-24

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