微波功率放大器发展概述

李建兵; 林鹏飞; 郝保良; 孙建邦

doi:10.11884/HPLPB202032.200095

微波功率放大器发展概述

doi: 10.11884/HPLPB202032.200095

1.
战略支援部队信息工程大学信息系统工程学院，郑州 450001
2.
中国电子科技集团公司第十二研究所，北京 100015

基金项目: 国家“核高基”重大专项项目（2014ZX01009-101-006，2017ZX01004-101-009A）

详细信息

作者简介:
李建兵（1976—），男，博士，副教授，研究方向为微波功率模块；49286894@qq.com

中图分类号: TN83
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- 被引次数: 0
出版历程
- 收稿日期: 2020-04-26
- 修回日期: 2020-06-15
- 刊出日期: 2020-06-24

Overview of development of microwave power amplifiers

1.
PLA Strategic Support Force Information Engineering University, Zhengzhou 450001, China
2.
Beijing Vacuum Electronics Research Institute, Beijing 100015, China

摘要

摘要:
微波功率放大器分为真空和固态两类，分别分析了两类器件的原理和特点，然后介绍了它们的发展历史、当前的技术研究状况和未来发展趋势。重点介绍了两种器件相结合的产物——微波功率模块，包括微波功率模块的产生过程和当前国内外的发展状况，并对未来的发展趋势进行了分析和预测。
- 微波功率放大器 /
- 真空器件 /
- 固态器件 /
- 微波功率模块
Abstract:
Microwave power amplifiers are divided into vacuum and solid devices. This paper analyzes the principles, advantages and disadvantages of these two types of devices, and then introduces their development history, current technical research status and future development trends. This paper mainly introduces the microwave power module as it is the combination of these two devices, including its evolution process and current development status both home and abroad, and analyzes and predictes its future development.
- microwave power amplifier /
- vacuum device /
- solid state device /
- microwave power module

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图 1 真空功率器件MTTF概况

Figure 1. Mean time to failure (MTTF) of vacuum power device

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图 2 MPM的组成

Figure 2. Composition of microwave power module(MPM)

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图 3 当前MPM频率功率分布

Figure 3. Current frequency power distribution of MPM

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图 4 M1871 MPM

Figure 4. M1871 MPM

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图 5 中国电子科技集团公司第十二研究所4～18 GHz 50 W MPM

Figure 5. 4～8 GHz 50 W MPM of Beijing Vacuum Electronics Research Institute

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图 6 Ku频段500 W脉冲双管MPM

Figure 6. Ku band 500 W double tube pulse MPM

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图 7 TH24512 MPM

Figure 7. TH24512 MPM

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图 8 信息工程大学的超薄EPC组件

Figure 8. Ultra-thin EPC components of Information Engineering University

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图 9 真空、固态及MPM最新饱和输出功率随频率变化图

Figure 9. Saturated output power vs frequency of current microwave power amplifiers

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表 1 国内外典型毫米波产品

Table 1. Typical millimeter wave products

serial	frequency/GHz	power/W	duty cycle/%	efficiency/%	manufacturer	main application
1	231～235	5～25	50	11	L3	radar（SAR）
2	90.6～91.4	300	50	−	L3	seeker，radar
	93～95	50	CW	15	CPI	radar communication
	W band（bandwidth 5 GHz）	150	20	20	CETC12	radar communication
	W band（bandwidth 0.5 GHz）	200	10	−	THALES	seeker，radar
3	81～86	200	CW	50	L3	communication
4	47～52.4	125	CW	35	L3	communication
	47～52.4	120	CW	30	CETC12	communication
	43.5～45.5	200	CW	46	L3	communication
5	34～36	1000	50	40	L3	seeker，radar
	32～37	700	50	40	CETC12	radar
	27.5～31	500	CW	57	L3/NEC/CPI	communication
	27.5～31	300	CW	45	CETC12	communication

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表 2 THz行波管测试结果

Table 2. THz TWT test results

frequency/THz	cathode voltage/kV	beam current/mA	saturated gain/dB	peak power/mW	3 dB bandwidth/GHz	duty cycle/%
0.64	9.7	4.8	22	259	15	10
0.67	9.6	3.1	17	71	15	0.5
0.85	11.4	2.8	22	39	15	11
1.03	12.1	2.3	20	29	5	0.3

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表 3 几种半导体材料的主要特性参数

Table 3. Main characteristic parameters of several semiconductor materials

material	band gap width/eV	electron mobility/ （cm²·V⁻¹·s⁻¹）	saturated electron velocity/ （10⁷ cm·s⁻¹）	breakdown field strength/ （MV·cm·⁻¹）	thermal conductivity/ （W·cm⁻¹·K⁻¹）	relative permittivity	Baliga value （high frequency）	Baliga value （low frequency）
Si	1.12	1 400	1	0.3	1.5	11.4	1	1
GaAs	1.42	8 500	2	0.4	0.5	13.1	11	16
4H-SiC	3.25	1 020	2	3	4.9	9.7	73	600
GaN	3.45	1 000（GaN） 2 000（AlGaN/GaN）	2.7	3.3	2	8.9	180	1 450

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