高功率半导体激光泵浦源研究进展

马骁宇; 张娜玲; 仲莉; 刘素平; 井红旗

doi:10.11884/HPLPB202032.200236

高功率半导体激光泵浦源研究进展

doi: 10.11884/HPLPB202032.200236

马骁宇^{1, 2,},
张娜玲^{1, 2, ,},
仲莉^{1, 2, ,},
刘素平^{1, 2},
井红旗¹

1.
中国科学院半导体研究所，光电子器件国家工程研究中心，北京 100083
2.
中国科学院大学材料科学与光电技术学院，北京 100049

基金项目: 国家重点研发计划项目（2018YFB1107300）

详细信息

作者简介:
马骁宇（1963—），男，研究员，博士生导师，主要从事大功率半导体激光器（列阵）及其组件、光纤激光器、固体激光器、存储用激光器等研究；maxy@semi.ac.cn

通讯作者:
张娜玲（1995—），女，博士研究生，主要从事大功率半导体激光器的研究；zhangnaling@semi.ac.cn

仲　莉（1980—），女，研究员，博士生导师，主要从事大功率半导体激光器、特种泵浦光源及固体激光器研究等；zhongli@semi.ac.cn

中图分类号: TN24
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- 被引次数: 0
出版历程
- 收稿日期: 2020-08-10
- 修回日期: 2020-11-06
- 刊出日期: 2020-11-19

Research progress of high power semiconductor laser pump source

Ma Xiaoyu^{1, 2
,},
Zhang Naling^{1, 2
, ,},
Zhong Li^{1, 2
, ,},
Liu Suping^{1, 2},
Jing Hongqi¹

1.
National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

摘要

摘要: 高功率半导体激光器是固体激光器和光纤激光器的主要泵浦源。激光泵浦源性能的大幅提升直接促进了固体激光器、光纤激光器等激光器的发展。主要介绍了8xx nm和9xx nm系列半导体激光泵浦源的最新研究进展，8xx nm单管输出功率已达18.8 W@95 µm，巴条输出功率已达1.8 kW（QCW），9xx nm单管输出功率已达35 W@100 µm，巴条输出功率已达1.98 kW（QCW）。谱宽<1 nm的窄谱宽半导体激光器输出功率可达14 W。展望了未来半导体激光器泵浦源的发展趋势。
- 高功率 /
- 半导体激光器 /
- 光纤激光器 /
- 巴条 /
- 激光泵浦源
Abstract: High power semiconductor lasers are the main pump source for solid-state lasers and fiber lasers. The improvement in the performance of laser pump sources directly promotes the development of solid-state lasers, fiber lasers and other lasers. The article introduces the latest research progress of 8xx nm and 9xx nm semiconductor laser pump sources. The output power research level of 8xx nm single-emitter laser has reached 18.8 W@95 µm, the output power research level of 8xx nm laser bar has reached 1.8 kW(QCW), the output power research level of 9xx nm single-emitter laser has reached 35 W@100 µm, the output power research level of 9xx nm laser bar has reached 1.98 kW(QCW). The output power of a narrow linewidth semiconductor laser with a linewidth ＜1 nm can reach 14 W. The development trend of semiconductor laser pump source in the future is forecasted.
- high power /
- semiconductor laser /
- fiber laser /
- bar /
- laser pump source

HTML全文

图 1 半导体激光器单元器件（图片来源于网络）

Figure 1. Semiconductor laser unit device (the picture comes from the internet)

下载: 全尺寸图片幻灯片

图 2 叠层激光器示意图（图片来源于网络）

Figure 2. Schematic of semiconductor laser stack (The picture comes from the internet)

下载: 全尺寸图片幻灯片

图 3 德国Jenoptik报道的808 nm单管激光器输出特性

Figure 3. Output characteristics of the 808 single-emitter diode lasers reported by Jenoptik

下载: 全尺寸图片幻灯片

图 4 中国科学院半导体研究所研制的880 nm 200 µm条宽单管芯半导体激光器综合参数测试图

Figure 4. Comprehensive parameter test chart of 880 nm 200 μm wide single-emitter semiconductor laser reported by Institute of Semiconductors，CAS

下载: 全尺寸图片幻灯片

图 5 美国nLight报道的88x nm单管激光器输出特性

Figure 5. Output characteristics of the 88x nm single-emitter diode lasers reported by nLight in USA

下载: 全尺寸图片幻灯片

图 6 美国nLight报道的808 nm 巴条激光器输出特性，其中HT代表高温，HE代表高效率

Figure 6. Output characteristics of the 808 nm laser bar reported by nLight in USA (HT represents high temperature， HE represents high efficiency)

下载: 全尺寸图片幻灯片

图 7 中科院半导体研究所研制的8xx nm连续半导体激光器特性参数测试图

Figure 7. Comprehensive parameter tests chart of 8xx nm (CW) semiconductor laser reported by Institute of Semiconductors，CAS

下载: 全尺寸图片幻灯片

图 8 美国JDSU报道的9xx nm单管激光器输出特性

Figure 8. Output characteristics of the 9xx nm single-emitter diode lasers reported by JDSU in USA

下载: 全尺寸图片幻灯片

图 9 FBH报道的940 nm 巴条激光器输出特性

Figure 9. Output characteristics of the 940 nm laser bar reported by Ferdinand-Braun-Institut

下载: 全尺寸图片幻灯片

图 10 Trumpf photonics报道的938 nm 巴条激光器输出特性

Figure 10. Output characteristics of the 938 nm laser bar reported by Trumpf photonics

下载: 全尺寸图片幻灯片

图 11 中科院半导体研究所研制的940 nm准连续巴条特性参数测试结果

Figure 11. Comprehensive parameter test results of 940 nm quasi-continuous laser bar reported by Institute of Semiconductors，CAS

下载: 全尺寸图片幻灯片

图 12 DBR和DFB激光器结构示意图

Figure 12. Schematic diagram of DBR and DFB laser structure

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表 1 8xx nm半导体激光器单管输出功率

Table 1. Output power of 8xx nm single-emitter lasers

year	wavelength/nm	output power/W	key parameters	conversion efficiency/%	research group	reference
2014	88x	18.8	95 μm，3.8 mm	58	USA，nLight	[9]
2015	808	10	190 μm，4 mm	−	Japan，Optoenergy	[10]
2016	808	22	200 μm	54	JENOPTIK	[11]
2016	808	9	140 μm，2 mm	63%	Coherent	[12]
2019	808	14	200 μm，4 mm	64	Ferdinand-Braun-Institut	[13]
2019	808	2.8	100 μm，2 mm	−	Wang Yue	[14]
2020	880	19	200 μm，4 mm	−	Institute of Semiconductors of CAS	−

下载: 导出CSV

表 2 8xx nm激光器巴条输出功率

Table 2. Output power of 8xx nm laser bar

year	wavelength/nm	output power	key parameters	fill factor/%	research group	reference
2012	88x	QCW：560 W	bar width：3 mm; cavity length：3 mm	80	USA，nLight	[19]
2013	808	CW：150 W	bar width：1 cm; cavity length：1.5 mm	50	USA，nLight	[20]
2014	88x	QCW：630 W	bar width：3 mm; cavity length：3 mm	80	USA，nLight	[9]
2016	808	QCW：200 W	bar width：5 mm; cavity length：1.5 mm	−	Russia	[21]
2016	880	QCW：250 W	bar width：0.5 cm	80	USA，nLight	[22]
2017	80x	QCW：210 W	bar width：5 mm; cavity length：1 mm	72	M.A. Ladugin	[23]
2017	880	1.8 kW（200 μs，14 Hz）	bar width：1 cm; cavity length：3 mm	80	USA，nLight	[24]
2017	808	QCW：613 W	cavity length：2 mm	85	Xi’an Institute of Optics and Precision Mechanics of CAS	[25]
2018	808	QCW：500 W	cavity length：1.5 mm	80	OSRAM	[26]
2020	8xx	CW：200 W	cm-bar	−	Institute of Semiconductors of CAS	−

下载: 导出CSV

表 3 9xx nm半导体激光器单管输出功率

Table 3. Output power of 9xx nm single-emitter semiconductor lasers

year	wavelength/nm	output power/W	key parameters	conversion efficiency/%	research group	reference
2009	980	20	96 μm，4 mm	−	Ferdinand-Braun-Institut	[32]
2013	975	15	100 μm，4 mm	74	Ferdinand-Braun-Institut	[33]
2013	915	13.5	85 μm，4 mm	−	S.McDougall	[34]
2015	9xx	29.5	100 μm，5.7 mm	−	USA，JDSU	[35]
2015	915	18	150 μm，5 mm	58	USA，nLight	[36]
2015	915	24	100 μm，4 mm	60	Japan，Optoenergy	[37]
2016	915	12.4	95 μm，4.8 mm	60	Research Institute of Tsinghua University in Shenzhen	[38]
2017	915	33	220 μm，4 mm	60	Japan，Fujikura	[39]
2018	940	14	100 μm，4 mm	63	Ferdinand-Braun-Institut	[40]
2019	975	20	200 μm，4 mm	66.7	Japan，Fujikura	[41]
2019	9xx	14.4	200 μm，2 mm	71.8	Institute of Semiconductors of CAS	[42]
2020	975	21	100 μm，4 mm	−	Institute of Semiconductors of CAS	[43]

下载: 导出CSV

表 4 9xx nm激光器巴条输出功率

Table 4. Output power of 9xx nm laser bar

year	wavelength/nm	output power	key parameters	fill factor/（%）	research group	reference
2013	9xx	QCW：1.7 kW	bar width：1 cm; cavity length：6 mm	72	Ferdinand-Braun-Institut	[45]
2014	940	CW：200 W	cavity length：4 mm	50	Jenoptik	[46]
2015	940	QCW：1.98 kW	bar width：1 cm; cavity length：4 mm	69	Ferdinand-Braun-Institut	[47]
2015	9xx	＞300 W	−	60	USA，Trumpf Photonics	[48]
2016	940	QCW：1 kW	bar width：1 cm; cavity length：4 mm	69	Ferdinand-Braun-Institut	[49]
2017	940	QCW：600 W	bar width：1 cm; cavity length：4 mm	70	M. M. Karow	[50]
2018	938	CW：476 W	−	60	USA，Trumpf Photonics	[51]
2019	9xx	450 W	bar width：1 cm; cavity length：4.2 mm	73	II-VI Laser Enterprise	[52]
2019	9xx	1 kW（0.2 ms，10 Hz）	−	87	Ferdinand-Braun-Institut	[53]
2019	960	665.6 W（500 μs）	bar width：1 cm; cavity length：2 mm	63.8	Xi’an Institute of Optics and Precision Mechanics of CAS	[54]
2020	9xx	CW：300 W, QCW：996 W	cm-bar	70	Institute of Semiconductors of CAS

下载: 导出CSV

表 5 9xx nm高功率窄谱宽半导体激光器研究进展

Table 5. Research progress of 9xx nm high-power narrow-linewidth semiconductor laser

year	wavelength/nm	output power/W	device type	spectral linewidth/nm	research group	reference
2010	975	10	DFB，second order grating	＜1	Ferdinand-Braun-Institut	[57]
2010	980	14	DBR，sixth order grating	＜1	Ferdinand-Braun-Institut	[58]
2012	976	11	DFB，eightieth-order grating	＜1	Ferdinand-Braun-Institut	[59]
2014	970	6	DFB，eightieth-order grating	＜0.7	Jonathan Decker	[60]
2017	975	5.5	DFB，second order grating	＜1	Mostallino	[61]
2019	980	10.7	DBR，sixth order grating	2.77	Qiao Chuang	[62]

下载: 导出CSV

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