Simulation of the temperature and thermal deformation of anode targets in high-current diodes
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摘要: 以电子束在靶中的能量沉积剖面为桥梁，建立了二极管阳极靶温度和热形变模拟方法。该方法可获知二极管不同工作状态下靶的温度分布和热形变情况，为靶热-力学损伤研究提供基础数据，为二极管构型设计和寿命提升提供技术支撑。将该方法应用于“强光一号”短γ二极管，计算结果显示：当阳极离子密度大于1014 cm−3时（强箍缩），靶表面温度最高可达5500～6000 ℃，热形变量达约4.5 mm；无离子流时（弱箍缩），温度处在4500 ℃左右，形变为2.8～3.5 mm。Abstract: The thermal-mechanical damage induced by high current pulsed electron beam striking on anode targets is a key factor affecting the stability and lifetime of high current diodes. This problem is mostly addressed by replacing the anode target and cleaning the cavity and cathode to ensure the normal operation of the diode. In this paper, a diode anode target temperature and thermal deformation simulation method is established using the energy deposition profile of the electron beam in the target as a bridge. The method can be used to determine the temperature distribution and thermal deformation of the target under various diode operating conditions, provide basic data for the investigation of thermal-mechanical damage to the target, and provide technical support for diode configuration design and life enhancement. With application of this method to the “Qiangguang-I” accelerator, the simulation results show that the surface temperature of the target can reach 5500−6000 ℃ and the thermal deformation can reach about 4.5 mm when the ion density is more than 1014 cm−3 (tight-pinched). The temperature is about 4500 ℃ and the thermal deformation is 2.8−3.2 mm when there is no ion flow (weak-pinched).
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Key words:
- high-current diode /
- anode target /
- temperature /
- thermal deformation /
- simulation
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图 1 阳极靶温度和热应力模拟方法示意图
Figure 1. Schematic of the method of anodes temperature and thermal deformation simulation
图 2 “强光一号”短γ状态负载区域示意图
Figure 2. Diagram of the load area of the“Qiangguang-I”accelerator
图 3 无阳极离子流时不同时刻下电子空间分布图像
Figure 3. Particle images at 10 ns, 15 ns and 30 ns without ions
图 4 存在阳极离子流(H+, 1014 cm−3)时的电子分布图像
Figure 4. Particle images at 10 ns, 15 ns and 30 ns with H+ ions (1014 cm−3)
图 5 不同阳极离子密度电子束靶面落点分布
Figure 5. Position distributions in r direction of the target with different ions densities
图 6 不同阳极离子密度下电子束入射角分布
Figure 6. Incident angle distributions with different ions densities
图 7 不同离子流情况下阳极靶能量沉积剖面
Figure 7. Energy deposition profile on the anode target of electrons with different ions densities
图 9 靶心表面温度变化图（0.1 ns～20 s）
Figure 9. Max tempreture as functions of time of the target surface with r ≤20 mm (0.1 ns～20 s，logarithmic)
图 10 靶心表面温度变化图（0～6 μs）
Figure 10. Max tempreture as functions of time of the target surface with r ≤20 mm (0～6 μs)
图 11 不同阳极离子密度影响下阳极靶靶心（r≤20 mm）热形变模拟结果
Figure 11. Simulation results of the thermal deformation of the target (r≤20 mm) with different ions densities
表 1 靶心区域（r≤20 mm）各层热功率密度
Table 1. Power density of every 0.06 mm depth in the r≤20 mm region
depth/mm thermal power density/(TW/m2) no ions 1012 ion/cm3 1014 ion/cm3 1015 ion/cm3 0.06 1.32 2.22 8.67 9.71 0.12 1.29 2.03 6.70 7.34 0.18 0.95 1.51 4.47 4.93 0.24 0.63 1.07 2.78 3.04 0.30 0.38 0.74 1.62 1.74 0.36 0.22 0.48 0.87 0.93 0.42 0.12 0.29 0.44 0.46 0.48 0.06 0.16 0.20 0.22 0.54 0.03 0.08 0.08 0.09 0.60 0.01 0.03 0.03 0.03 
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表 2 钽材料参数
Table 2. Properties of Ta
density/
(kg/m3)coefficient of
thermal expansion/C−1Young’s modulus/
PaPoisson’s
ratiobulk
modulus/Pashear
modulus/Pathermal conductivity
(25 ℃)/(W·m−1·C−1)specific heat
(26 ℃)/(J·g−1·K−1)16690 6.5×10−6 1.86×1011 0.35 2.0667×1011 6.8889×1010 54 0.135
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