Influence factors of the pulsed breakdown time delay jitter of a self-triggered UV-illuminated switch and an improvement method
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摘要: 研究了一种自触发紫外预电离开关击穿时延抖动特性的影响因素，结果表明：触发间隙电容放电阶段起预电离作用时，预电离注入时刻开关电场是开关时延抖动的决定性因素，提高工作系数和采用逸出功更低的电极材料对降低开关在脉冲峰值附近击穿时的时延抖动效果有限。提出的改进方法为：减小开关均压电阻阻值，显著延长触发间隙的有效燃弧时间，消除预电离注入时间及抖动的影响。采用改进方法时可以使开关在工作电压300～800 kV、前沿100 ns、180 ns的脉冲峰值附近击穿时的时延抖动分别小于1.3 ns、2.8 ns。Abstract: Influence factors of the breakdown delay jitter of a self-triggered UV-illuminated switch are studied. It indicates that the switch electric field at the injection time of pre-ionization is the decisive factor of the time jitter when the capacitor discharge stage of the trigger gap works. Increasing the operating coefficient and using electrode material with lower working function cannot remarkably reduce the time jitter when the switch breaks down near the peak time. The improvement method is to reduce the value of parallel resistors, which can extend the duration of sufficient arcing of the trigger gap and eliminate the influence of pre-ionization injection time and its jitter. By adapting this method, the time jitter is less than 1.3 ns or 2.8 ns under a pulse rise time of 100 ns or 180 ns when the operating voltage is 300−800 kV.
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Key words:
- gas switch /
- pre-ionization /
- self-triggering /
- pulsed breakdown time delay /
- jitter
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图 4 不同工作系数下的开关击穿时延及抖动
Figure 4. Breakdown time delay and jitter under different working coefficient
图 5 脉冲波形相同时电极材料对击穿时延及抖动的影响
Figure 5. Influence of electrode material on the breakdown time delay and jitter under the same input pulse waveform
图 6 峰值击穿时电极材料对击穿时延及抖动的影响
Figure 6. Influence of electrode material on the breakdown time delay and jitter under the peak-time breakdown case
图 7 峰值击穿时电极材料对击穿电压及分散性的影响
Figure 7. Influence of electrode material on the breakdown voltage and jitter under the peak-time breakdown case
图 8 分压电阻阻值对触发间隙放电电流的影响
Figure 8. Influence of parallel resistor on the discharge current of trigger gap
图 9 触发间隙持续燃弧时不同脉冲前沿下的击穿时延及抖动
Figure 9. Breakdown time delay and jitter with a continuously arcing trigger gap under different pulse rise time
图 10 触发间隙持续燃弧时不同脉冲前沿下的击穿电压及分散性
Figure 10. Breakdown voltage and jitter with a continuously arcing trigger gap under different pulse rise time
表 1 开关击穿特性数据(R=49 kΩ，去除Rtr)
Table 1. Breakdown characteristics of the switch (R=49 kΩ, Rtr removed)
p/MPa mean breakdown
time delay ${\bar t}_{\rm{d}}$/nsbreakdown time
delay jitter tj/nsmean breakdown
voltage ${\bar U}_{\rm{b}}$/kVpercentage of front
edge breakdown/%0.1 83.6 13.2 249.7 52.6 0.2 81.1 7.7 365.5 70.0 0.3 99.9 9.0 485.0 100 0.4 99.3 3.3 513.1 0.5 96.9 2.5 617.1 0.6 96.2 3.2 703.3 0.7 97.5 3.5 794.4 
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表 2 开关击穿特性数据(R=49 kΩ，Rtr=4.5 kΩ)
Table 2. Breakdown characteristics of the switch (R=49 kΩ, Rtr=4.5 kΩ)
p/MPa mean breakdown
time delay ${\bar t}_{\rm{d}}$/nsbreakdown time
delay jitter tj/nsmean breakdown
voltage ${\bar U}_{\rm{b}}$/kVpercentage of front
edge breakdown/%0.1 72.6 4.9 271.9 100 0.2 88.3 5.8 358.2 0.3 95.5 6.8 459.6 88.0 0.4 98.0 3.9 553.1 98.0 0.5 92.3 3.1 663.1 94.0 0.6 95.5 2.1 755.8 100 0.7 99.0 2.4 839.0
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表 3 开关击穿特性数据(R=49 kΩ，Rtr=2.2 kΩ)
Table 3. Breakdown characteristics of the switch (R=49 kΩ, Rtr=2.2 kΩ)
p/MPa mean breakdown
time delay ${\bar t}_{\rm{d}}$/nsbreakdown time
delay jitter tj/nsmean breakdown
voltage ${\bar U}_{\rm{b}}$/kVpercentage of front
edge breakdown/%0.1 99.4 2.5 193.2 100 0.2 99.5 2.0 311.3 0.3 99.1 0.9 423.9 0.4 101.2 1.2 519.2 0.5 100.2 1.0 630.8 0.6 100.2 1.6 717.9 0.7 99.1 1.6 804.7
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表 4 开关击穿特性数据(R=49 kΩ，Rtr=2.2 kΩ，脉冲前沿100 ns)
Table 4. Breakdown characteristics of the switch (R=49 kΩ, Rtr=2.2 kΩ, pulse rise time=100 ns)
p/MPa mean breakdown
time delay ${\bar t}_{\rm{d}}$/nsbreakdown time
delay jitter tj/nsmean breakdown
voltage ${\bar U}_{\rm{b}}$/kVbreakdown voltage
jitter/%0.4 101.2 1.2 519.2 0.47 0.5 100.2 1.0 630.8 0.36 0.6 100.2 1.6 717.9 0.42 0.7 99.1 1.6 804.7 0.35
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表 5 开关击穿特性数据(R=49 kΩ，Rtr=2.2 kΩ，脉冲前沿180 ns)
Table 5. Breakdown characteristics of the switch (R=49 kΩ, Rtr=2.2 kΩ, pulse rise time=180 ns)
p/MPa mean breakdown
time delay ${\bar t}_{\rm{d}}$/nsbreakdown time
delay jitter tj/nsmean breakdown
voltage ${\bar U}_{\rm{b}}$/kVbreakdown voltage
jitter/%0.4 169.0 7.1 505.0 0.84 0.5 169.7 5.7 603.9 0.54 0.6 169.2 7.8 708.9 0.52 0.7 169.4 5.3 780.2 0.66
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