Research on tunable pulse generation with MHz repetition rate based on compensated 4H-SiC photoconductive semiconductor
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摘要: 随着微波光子学的发展，新型光导微波技术利用高重频脉冲簇激光，入射到线性光导半导体器件中产生可调谐高功率电磁脉冲的方式受到广泛关注。SiC光导半导体开关（PCSS）具有高击穿场强，高饱和载流子速率，高抗辐射能力，高热传导率和高温工作稳定性等优点，是产生高重频、高功率、超短脉冲的重要固态电子器件。介绍了一种基于钒补偿半绝缘4H-SiC PCSS的MHz重复频率亚纳秒脉冲发生器。该发生器采用1 MHz，1030 nm可调谐光脉冲宽度的激光簇驱动源，4H-SiC PCSS的厚度为0.8 mm。整系统可得到最大输出电功率176 kW、最小半高宽约为365 ps的MHz重频短脉冲。Abstract: Agile high repetition rate discharge technology has important applications in improving plasma uniformity. SiC photoconductive semiconductor switch (PCSS) has the advantages of high breakdown field strength, high saturated carrier rate, high radiation resistance, high thermal conductivity and high temperature stability. It is an important solid-state electronic device to produce high repetition rate, high power and short width pulse. Operation characteristics of the MHz repetition frequency sub-nanosecond pulse generator based on vanadium-compensated semi-insulating (VCSI) 4H-SiC PCSS under high electric field are presented in this paper. 1 MHz, 1030 nm laser cluster driver with tunable optical pulse width is used for VCSI 4H-SiC PCSS response test. The 0.8 mm thick 4H-SiC PCSS can work with electric fields up to 200 kV/cm and the electrical power capacity up to 176 kW without failure for long time. The minimum photocurrent pulse width is about 365 ps and the jitter is less than 100 ps.
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图 1 4H-SiC光导半导体器件封装结构与CVR高频响应电流图
Figure 1. Insulated package structure of VCSI 4H-SiC PCSS device and circuit diagram of CVR high frequency response circuit
图 3 4H-SiC光导器件光生载流子分布仿真(d=0.8 mm)
Figure 3. Photocurrent density simulation of 4H-SiC PCSS (d=0.8 mm)
图 4 1 MHz超高重频光电流输出波形图
Figure 4. Output current of 4H-SiC PCSS at 1 MHz ultra-high re-frequency
图 6 500 ps连续光脉冲波形与电路响应波形
Figure 6. Waveform of continuous laser pulse and output photocurrent for 500 ps laser triggering
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