Fabrication of avalanche GaAs photoconductive switch with opposed-electrode structure and its switching characteristics
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摘要: 雪崩砷化镓光导开关（PCSS）因其超快开关速度、低触发抖动、光电隔离、高功率容量、高重复频率以及器件结构灵活的特点，得到广泛应用。制备封装了电极间隙为5 mm的异面结构GaAs光导开关，对不同偏置电场下（36～76 kV/cm）开关的暗态和开态的电学特性进行了测试分析，结果表明其具有百皮秒～纳秒量级的上升沿、低暗态泄漏电流（0.15～6.61 μA）、高耐压（18～38 kV）的特点。实验探究了开关工作次数与输出电压峰值的关系，结果表明随着工作次数的增大，输出电压幅值呈台阶型降低趋势，在20 kV、2 Hz条件下，开关寿命达4.0×104次。Abstract: Avalanche gallium arsenide photoconductive semiconductor switches (GaAs PCSSs ) have a wide range of applications due to their ultra-fast switching speed, low triggering jitter , optoelectronic isolation , high power capacity, high repetition frequency, and flexible device structure. In this paper, GaAs PCSSs with an anisotropic structure and an electrode gap of 5 mm are fabricated and packaged. The electrical characteristics of the switch in dark-state and on-states under different bias electric fields (36−76 kV/cm) are analyzed, featuring a rising edge in the order of hundred picosecond to nanosecond, low dark-state leakage current (0.15−6.61 μA) and high withstand voltage (18−38 kV). The relationship between the number of switching operations and the peak output voltage is explored. The experimental results show that the output voltage amplitude tends to decrease in a stepwise manner with the increase of the number of operations. The switch lifetime reaches 4.0 × 104 times at 20 kV and 2 Hz.
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图 1 GaAs光导开关的结构示意图和实物图
Figure 1. Fabrication procedures and physical picture of a GaAs photoconductive semiconductor switch
图 2 GaAs光导开关的测试电路示意图
Figure 2. Schematic diagram of the test circuit for GaAs photoconductive semiconductor switches
图 3 不同偏置电场下GaAs光导开关的电学特性
Figure 3. Electrical characteristics of GaAs photoconductive semiconductor switches under different bias electric fields
图 4 GaAs光导开关的寿命测试
Figure 4. Lifetime testing of GaAs photoconductive semiconductor switches
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