异面结构雪崩GaAs光导开关的制备及特性测试

杨迎香; 杨向红; 朱章杰; 黄嘉; 李昕; 胡龙

doi:10.11884/HPLPB202436.240161

异面结构雪崩GaAs光导开关的制备及特性测试

doi: 10.11884/HPLPB202436.240161

杨迎香^1,,
杨向红^1, ,,
朱章杰²,
黄嘉²,
李昕¹,
胡龙^1, ,

1.
西安交通大学微电子学院，西安 710049
2.
西安交通大学电子信息工程学院，西安 710049

基金项目: 国家自然科学基金面上项目(52177156); 脉冲功率激光技术国家重点实验室开放基金项目(SKL2021KF05)

详细信息

作者简介:
杨迎香，xy_yang@stu.xjtu.edu.cn

通讯作者:
杨向红，yxh8000@xjtu.edu.cn

胡　龙，hulong@xjtu.edu.cn。

中图分类号: TN36
计量
- 文章访问数: 189
- HTML全文浏览量: 119
- PDF下载量: 19
- 被引次数: 0
出版历程
- 收稿日期: 2024-06-14
- 修回日期: 2024-07-08
- 录用日期: 2024-07-08
- 网络出版日期: 2024-07-10
- 刊出日期: 2024-11-01

Fabrication of avalanche GaAs photoconductive switch with opposed-electrode structure and its switching characteristics

Yang Yingxiang^1
,,
Yang Xianghong^{1
, ,},
Zhu Zangjie²,
Huang Jia²,
Li Xin¹,
Hu Long^{1
, ,}

1.
School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
2.
School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

摘要

摘要: 雪崩砷化镓光导开关（PCSS）因其超快开关速度、低触发抖动、光电隔离、高功率容量、高重复频率以及器件结构灵活的特点，得到广泛应用。制备封装了电极间隙为5 mm的异面结构GaAs光导开关，对不同偏置电场下（36～76 kV/cm）开关的暗态和开态的电学特性进行了测试分析，结果表明其具有百皮秒～纳秒量级的上升沿、低暗态泄漏电流（0.15～6.61 μA）、高耐压（18～38 kV）的特点。实验探究了开关工作次数与输出电压峰值的关系，结果表明随着工作次数的增大，输出电压幅值呈台阶型降低趋势，在20 kV、2 Hz条件下，开关寿命达4.0×10⁴次。
- 砷化镓 /
- 光导开关 /
- 暗态泄漏电流 /
- 输出特性 /
- 寿命
Abstract: Avalanche gallium arsenide photoconductive semiconductor switches (GaAs PCSSs ) have a wide range of applications due to their ultra-fast switching speed, low triggering jitter , optoelectronic isolation , high power capacity, high repetition frequency, and flexible device structure. In this paper, GaAs PCSSs with an anisotropic structure and an electrode gap of 5 mm are fabricated and packaged. The electrical characteristics of the switch in dark-state and on-states under different bias electric fields (36−76 kV/cm) are analyzed, featuring a rising edge in the order of hundred picosecond to nanosecond, low dark-state leakage current (0.15−6.61 μA) and high withstand voltage (18−38 kV). The relationship between the number of switching operations and the peak output voltage is explored. The experimental results show that the output voltage amplitude tends to decrease in a stepwise manner with the increase of the number of operations. The switch lifetime reaches 4.0 × 10⁴ times at 20 kV and 2 Hz.
- gallium arsenide /
- photoconductive semiconductor switches /
- dark-state leakage current /
- output electrical characteristics /
- lifetime

HTML全文

图 1 GaAs光导开关的结构示意图和实物图

Figure 1. Fabrication procedures and physical picture of a GaAs photoconductive semiconductor switch

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图 2 GaAs光导开关的测试电路示意图

Figure 2. Schematic diagram of the test circuit for GaAs photoconductive semiconductor switches

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图 3 不同偏置电场下GaAs光导开关的电学特性

Figure 3. Electrical characteristics of GaAs photoconductive semiconductor switches under different bias electric fields

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图 4 GaAs光导开关的寿命测试

Figure 4. Lifetime testing of GaAs photoconductive semiconductor switches

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图 5 GaAs光导开关失效器件实物图

Figure 5. Physical picture of GaAs photoconductive semiconductor switch failure device

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参考文献(20)

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