Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches
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摘要: 光斑是影响光导开关导通特性的重要因素之一。探索了激光能量分布对光导开关输出特性的影响，分别采用高斯光和平顶光对同一GaN光导开关导通特性进行了对比测试。结果表明，由于平顶光具有更均匀的能量分布，相比于高斯光触发，在相同外加偏置电压（800 V）下，电压转换效率提升了6.8%。在激光能量为500 μJ时的平顶光触发下进行了加压测试，最大峰值输出电压为
4550 V，此时输出功率达到414 kW，上升时间为420 ps，下降时间为5 ns，导通电阻为13.7 Ω。Abstract: The beam spot is one of the important factors affecting the on-state performance of photoconductive switches. The on-state performance of the GaN photoconductive switch has been tested under the triggering of Gaussian beam and flat-top beam. As the energy uniformity of flat-top beam is better than that of Gaussian beam, the results show that the voltage conversion efficiency is increased by 6.8% under the same applied bias voltage (800 V), Triggered by flat-top beam at a laser energy of 500 μJ, GaN PCSS shows a maximum peak output voltage of4550 V, at the same time the output power reaches 414 kW and the conduction is 13.7 Ω. The output waveform has a rise time of 420 ps and a fall time of 5 ns.-
Key words:
- photoconductive semiconductor switch /
- GaN /
- flat-top beam /
- Gaussian beam /
- on-state performance
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图 1 GaN PCSS的结构示意图(Ti/Al/Ni/Au：20 nm/120 nm/55 nm /45 nm)
Figure 1. Schematic of GaN PCSS device (Ti/Al/Ni/Au: 20 nm/120 nm/55 nm/45 nm)
图 2 激光器脉冲波形图(355 nm、80 ps、500 Hz)及激光触发GaN PCSS的测试电路
Figure 2. Pulse width of laser (355 nm, 80 ps, 500 Hz) waveform and circuit diagram of the test-setup for evaluation of the on-state performance of the GaN PCSS
图 3 高斯光、平顶光轮廓图及沿y轴的能量分布图
Figure 3. Profile images and energy distribution along the y axis of Gaussian beam, falt-top beam
图 4 800 V充电电压下，不同激光能量的输出电压波形和效率对比，以及500 μJ激光能量下的输出电压波形比较图
Figure 4. Output voltage waveform diagrams, efficiency comparison charts at different laser energy levels under an 800 V charging voltage, and a comparative voltage waveform diagram at 500 μJ laser energy
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