Experimental research on GaAs photoconductive semiconductor switches triggered by laser diode
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摘要: 介绍了利用大功率半导体激光二极管触发3 mm间隙GaAs光导开关、产生非线性电脉冲输出的实验，激光二极管输出功率为70 W，上升前沿约20 ns，脉冲半高宽（FWHM）约40 ns。随着开关两端偏置场强增加，输出电压也线性增加，当偏置场强超过一定阈值，增至约2.53 kV/mm时，经过一个较小的电压峰值和时间延迟后，输出电压急剧增加，产生雪崩现象。实验结果表明:GaAs开关非线性输出的产生与载流子聚集和碰撞电离有关，偏置电场的提高增加了开关芯片中载流子聚集数量，加剧了碰撞离化程度，从而使开关从线性模式进入雪崩模式。Abstract: This paper introduces an experiment of 3 mm-gap GaAs photoconductive semiconductor switch (PCSS) triggered by laser diode，which produces nonlinear output on 600 load. The peak power of laser diode is 70 W，and its output rise-time and duration (FWHM) are 20 and 40 ns， respectively. Along with the bias electric field enhancement， the output voltage increases linearly； when the bias electric field exceeds the threshold， about 2.53 kV/mm， the output voltage increases rapidly after a small peak and delay， and the avalanche occurs. Experiment results indicate that the production of nonlinear output has relation to carrier accumulation and impact ionization in GaAs chip； the enhancement of bias electric field increases the number of collective carriers， the degree of impact ionization， and thus accelerate the switchs turn into avalanche mode.
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Key words:
- photoconductive semiconductor switch /
- nonlinear /
- laser diode /
- carrier accumulation
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