Responses of silicon bar fixed in waveguide to high power terahertz pulse
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摘要: 利用三维电磁场时域有限差分法，对0.3~0.4 THz高功率太赫兹脉冲作用下置于矩形波导内部宽边中心的n型硅块响应规律进行了研究。通过对置入硅块前后矩形波导内电磁场分布、电压驻波比及硅块内平均电场的模拟分析，得出硅块几何尺寸和电阻率对上述物理量的响应规律，硅块长、宽、高和电阻率均会对波导内电压驻波系数产生影响，其中以高度影响最为明显；硅块内平均电场在低频段和高频段单调性不一致。最后，在优化硅块长、宽、高及电阻率的基础上，给出了一种可用于该频段高功率太赫兹脉冲直接测量的电阻探测器芯片设计方案，其相对灵敏度约为0.509 kW-1，幅度波动不超过14%，电压驻波比不大于1.34。Abstract: Researches on responses of an n-type silicon bar fixed in a rectangular waveguide to high power terahertz pulse have been carried out for the 0.3~0.4 THz band. The distribution of electromagnetic field components, voltage standing-wave ratio(VSWR) in the waveguide, and the average electric field in the n-type silicon bar is determined by means of a three-dimensional finite-difference time-domain method. By adjusting several factors, such as the length, width, height and the specific resistance of the silicon bar, a novel project of a sensor that can be used as measurement device for high power terahertz pulse directly is presented. The relative sensitivity of the sensor is about 0.509 kW-1, its fluctuation is in the range of 14%, and its VSWR is no more than 1.34.
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Key words:
- high power /
- terahertz /
- rectangular waveguide /
- resistive sensor /
- measurement
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