Fabrication of 2.0 μm Sb-based multi-quantum-well materials
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摘要: 采用分子束外延外延生长技术，优化InGaAsSb/AlGaAsSb多量子阱点材料的生长速率、生长温度和束流比等生长参数，获得了高质量的多量子阱材料。室温光荧光谱表明，材料的发光波长为2.0 m左右。该结果表明,通过优化生长条件和结构参数制备的量子阱材料，可以获得良好的结构质量和光学特性。所制备的器件室温条件下输出功率22 mW，阈值电流300 mA。Abstract: This paper studies parameters of InGaAsSb/AlGaAsSb multi-quantum-well (MQW) materials grown by molecular beam epitaxy (MBE), including the growth rate, growth temperature and flux for high quality MQW materials, respectively. As well, characterization of the epi-layers by X-ray diffraction (XRD) indicates high uniformity and excellent crystalline quality with satellite peaks. Emitting wavelength is about 2.0 m measured by photoluminescence(PL) at room temperature (RT). The excellent crystalline quality and optical characteristic are obtained through optimization of growth conditions and structure parameters. The threshold current of the fabricated device is about 300 mA, the output power is 22 mW at room temperature.
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Key words:
- multiple-quantum-well /
- molecular beam epitaxy /
- mid-infrared
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