半导体量子阱材料的自由电子激光辐照效应及OTCS测试研究
Study on GaAs/AlGaAs multiple quantum wells irradiated by free electron laser and OTCS measurement
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摘要: 利用低温光荧光谱(PL)和光瞬态电流谱(OTCS)研究了自由电子激光辐照对GaAs/AlGaAs多量子阱材料的光学性质以及缺陷能级的影响。用波长为8.92μm，光功率密度相应于电场强度为20kV/cm的自由电子激光辐照多量子阱60min，分析PL谱发现量子阱特征峰(797nm)经过辐照后峰值发生红移至812nm，波形展宽，峰高降低。分析OTCS谱发现自由电子激光辐照引入了新的缺陷能级，量子阱结构发生变化, 对此结果进行了讨论，并与电子辐照的情况做了比较。Abstract: Photoluminescence (PL) and optical transient current spectra (OTCS) were observed from GaAs/AlGaAs quantum wells structure excited by midinfrared free electron laser (FEL) irradiation. The experimental results of PL showed that the characteristic PL peak of quantum wells shifted to longer wavelength (red shift) and the intensity decreased much after FEL irradiation. From the analysis of OTCS, extrinsic defects were found after FEL irradiation. This paper author discusses the results and comparison with that of electron irradiation．
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