电子储存环中离子俘获不稳定性的强-强模型模拟
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摘要: 电子储存环中，由于被束流势阱俘获的离子会引起束流不稳定性。研究这种不稳定性的产生机制和抑制方法对提高机器的性能有重要理论和现实意义。介绍了用强-强模型对合肥光源（HLS）电子储存环中离子俘获不稳定性产生机制进行的模拟研究。模拟结果可用于理解在合肥光源（HLS）储存环上观察到的离子俘获现象。Abstract: The ions trapped by beam potential well can cause beam instability in electron storage rings. It is important to study the mechanism and suppress method of the instability to increase the perform level of machine. In this paper, the simulation methods and results of ion-trapping instability using strong-strong model were introduced for the HLS ring. These results can be used to understand the phenomena observed in the HLS ring.
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Key words:
- electron storage ring /
- ion-trapping insta /
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