描述光伏效应的新解析模型
A new analytic model describing photovoltaic effect
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摘要: 对陆启生等人提出的描述光伏效应的解析模型涉及的边界条件进行了讨论，提出了一个适用性更宽的解析模型。通过对新模型、陆的模型以及另一个解析模型的比较，对前两个模型能够描述光伏型光电探测器在强光辐照时的信号饱和效应的原因进行了解释。Abstract: A new analytic model describing photovoltaic effect in photovoltaic infrared detectors is put forward, which disposes the relation between photoelectron concentrations at the two sides of the depletion region of a p-n junction in common cases while Lu Qisheng’s analytic model does in special case. By comparison among the new model, Lu’s model and another analytic model, it is explained why the former two models, different from the latter, can explain signal saturation effect which is observed in photovoltaic infrared detectors under laser irradiation.
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Key words:
- photovoltaic effect /
- analytic model /
- p-n junction
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