电磁脉冲对半导体器件的电流模式破坏
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摘要: 利用时域有限差分（FDTD）方法，对电磁脉冲引起半导体器件的毁坏过程进行了数值模拟，得到了无负载半导体pn结器件在快前沿（ns量级）电磁脉冲作用下的瞬态行为，及由于电流引起的器件烧毁过程中器件参数的变化情况。Abstract: By means of the FDTD method, we have carried out the modeling of burnout of the semiconductor devices under the Elec tromagnetic Pulse (EMP) environment. We obtained the transient behavior of pn ju nction device which is under the attack of rapidrise (about ns risetime ) EM P, and the variances of device parameters during the burnout of the device wh ich is caused by current through the device.
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Key words:
- emp /
- semiconductor devices /
- current mode /
- fdtd
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