退火及铟含量对InGaAs量子点光学特性的影响
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摘要: 研究了退火条件和In组份对分子束外延生长的InGaAs量子点（分别 以GaAs或AlG aAs为基体）光学特性的影响。表明：量子点中In含量的增加将导致载流子的定域能增加和基态与激发态之间的能量间隔增大。采用垂直耦合的量子点及宽能带的AlGaAs基体可增 强材料的热稳定性。以AlGaAs为基体的InGaAs量子点，高温后退火工艺 (T= 830℃)可改善低温生长的AlGaAs层的质量，从而改善量子点激光器材料的质量。Abstract: The influence of annealing and Indium compositions on optical properties of InGaAs quantum dots(QDs) in the GaAs or AlGaAs matrix, grown by molecula r beam epitaxy, has been investigated. It is shown that increasing Indium compos ition in QDs leads to an enhancement of carrier location energy and an increase of the energy gap between ground and excited states in QDs.Vertical couple d QDs with wide band gap AlGaAs matrix will lead to a highert hermal stability. In structures of vertical coupled InGaAs Q Ds in the AlGaAs matrix, high temperature (T=830℃) postgrowth annealing all ows to improve the quality of AlGaAs layers grown at low temperature, while the energy spectra of structures is not significantly changed.
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Key words:
- quantum dots /
- postgrowth an nealing /
- photoluminescence /
- injection semiconductor laser
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