P沟道和N沟道MOS场效应管的辐照实验研究
Study of power MOSFET under irradiation condition
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摘要: 通过对P沟道MOS场效应管IRF9530和N沟道MOS场效应管IRF540N的X射线和钴源γ射线的辐照对比研究，发现两种场效应管阈值电压变化随吸收剂量近似成一阶指数衰减关系。产生这种现象的原因是场效应管氧化物中的空间俘获电荷与吸收剂量近似成线性变化，对阈值电压变化和吸收剂量有近似线性的改变；而界面态对空间电荷有补偿作用，其对阈值电压的改变与吸收剂量有近似成二次方的关系。Abstract: Power MOSFET IRF540N and IRF9530 were irradiated by X-ray and gamma ray, and the relationship of their threshold voltage and absorbed dose was studied. It is found that the change of threshold voltage value fits in exponential law with absorbed dose,which is caused by the effect of space charge and interface charge.The space charges affect threshold voltage of MOSFET varying linearly with absorbed dose,and the interface charges have a compensational role to space charges,it affects threshold voltage varying linearly with square of absorbed dose．
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Key words:
- power mosfet /
- absorbed dose /
- threshold voltage
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