空间辐射效应的蒙特-卡罗模拟
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摘要: 概述了天然宇宙空间的辐射环境,简要地分析了辐射效应机制,在辐射效应的蒙特-卡罗模拟中对靶材料作了无定形假设,入射粒子在靶材料中的弹性能量损失采用经典二体散射公式,非弹性能量损失高能时采用Beth-Bloch公式,低能时采用Lindhard-Scharff公式,中能时采用插值公式,撞出晶格原子引起的次级损伤用Kinchin-Pease模型计算,最后对100KeV硼离子入射于硅材料引起的辐射效应进行了模拟计算,并给出了计算结果和分析。Abstract: The general properties of natural space radiation environment are summarized, the basic mechanisms of radiation effects are analyzed briefly, In the Monte Carlo Simulation of the radiation effects, the amorphous target material is assumed, the elastic energy loss of incident particle is calculated by binary collision approximation. The inelastic energy loss of project particle for the high energy is calculated by Bethe-Bloch formulation, Lindhard-Scharff formulation is used for low energy and the interpolation formulation was used for the gap between the high and low energy region. The Kinchin-Pease model is used to calculate the secondary damage caused by the displaced lattice atom. Finally the computed results of 100keV Boron incident on silicon are presented and analyzed.
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Key words:
- radiation environment /
- radiation effects /
- monte carlo simulation methods
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