空腔铜靶的化学镀制研究
Study of electroless plating for copper hohlraum fabrication
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摘要: 介绍了在预处理芯轴(聚甲基丙烯酸甲酯)表面采用化学镀的方法制备铜空腔的技术，研究了镀液中硫酸铜含量、甲醛含量，镀液pH值、温度等对化学镀铜沉积速率和溶液稳定性的影响。根据实验确定了适宜的化学镀铜工艺规范：硫酸铜质量浓度10~20 g/L，TART·K·Na质量浓度10~30 g/L，EDTA·2Na质量浓度10~28 g/L，甲醛体积浓度10~25 mL/L，添加剂质量浓度10 mg/L，pH值12~13，温度35~65 ℃。通过该工艺制备出的镀层厚度达到10～25 μm，均匀性达到95%，表面无砂眼、裂纹等缺陷，刻蚀芯轴后空腔能自持。该方法为ICF研究制备金属或合金材料靶提供了新的途径。Abstract: This paper introduces the electroless plating technique to fabricate integral Cu hohlraum on the surface of pretreated PMMA axis. Some parameters effect on the deposition rate and solution stability, such as the CuSO4 content, reducing agent content, pH value and temperature were studied. The optimized mass concentration of CuSO4 is 10~20 g/L, TART·K·Na is 10~30 g/L, EDTA·2Na is 10~28 g/L, additive is 10 mg/L, the volumic concetration of HCHO is 10~25 mL/L, pH value is 12~13, and the base temperature is 35~65 ℃. The feasible technics of electroless Cu plating are confirmed base on experimental result. According to the technics, Cu hohlraum with thickness of 10～25 μm was obtained and there were not flaw and indentations on the surface. After the axis was removed by chemical etching, t
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Key words:
- electroless cu plating /
- deposition rate /
- solution stability
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