电子碰撞引起的铜元素K壳层电离截面的测量与修正
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摘要: 在电子碰撞的情形下，通过对铜靶的特征X射线测量，从而推算出它的K壳层电离截面。在实验中采用了薄靶厚衬底新方法。通过电子输运计算，由厚衬底产生的反射电子对计数的影响得以修正。用蒙特卡罗技术对质量厚度为23 mg∕cm2的铜靶的多次散射影响作了修正。Abstract: Through measuring the characteristic X-ray for copper target of mass thickness 23m g/cm2, its K-shell ionization cross section was calculated. The method of thin target with thick substrate was used in the experiment. The influence of the electrons reflected from the substrate was corrected by means of a electron transport calculation. The multiple scattering effect for the copper target of mass thickness 23m g /cm2 is corrected by the EGS4 program of Monte Carlo techniques. This method is reported for first time.
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