1.06 μm连续激光辐照TiO2/SiO2/K9薄膜元件温升规律研究
Thermal effect of T TiO2/SiO2/K9 film by 1.06 μm CW laser
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摘要: 利用1.06 μm连续激光在不同强度下辐照TiO2/SiO2/K9薄膜元件，实验中用红外热像仪测量激光辐照在TiO2/SiO2/K9元件表面引起的温升随时间的变化，通过数据处理，获得激光辐照区域最高温度随辐照时间的增加而增加。同时，给出材料温升随材料发射率的变化关系。并用程序模拟不同激光强度下薄膜温度场的分布，通过实验测量数据校正数值模拟计算结果，给出TiO2/SiO2/K9薄膜元件温度随激光辐照强度和辐照时间的变化规律。并且获得在薄膜厚度方向：薄膜表面温度最高，基底与薄膜接触处温度最低；沿径向：激光辐照中心温度最高，边沿温度最低。Abstract: 1.06 μm CW-Nd:YAG laser with different intensity was used to irradiate TiO2/SiO2/K9 film component, and the temperature rise of the film surface with time was measured by thermal MP575. A program was used to calculate the temperature field of laser with different intensity. Comparing experimental data with numerical simulation result, temperature change of film component with laser intensity and time were gained. The highest temperature was on the surface of film and the lowest on the surface of substrate in the direction of thickness, and the highest in the central of laser facular, the lowest at the edge in the radial direction.
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Key words:
- cw-laser /
- thin film element /
- temperature field /
- numerical simulation
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