二极管失效和烧毁阈值与电磁波参数关系
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摘要: 利用半导体PN结器件一维模拟程序mPND1D，计算了二极管在不同电磁脉冲电压源条件下的失效和烧毁时器件吸收的能量，并对结果作了初步分析。Abstract: By means of the program mPND1D (one-dimensional modeling for PN junction devices), the diode failure and burnout energy absorbed have been calculated for different EMP pulsed voltage sources, and the results are analyzed preliminarily.
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Key words:
- emp /
- semiconductor devices /
- failure and burnout /
- fdtd
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