埋点靶中CH薄膜的制备工艺研究
Study on the Fabrication Technology of the CH Film in Microspot Targets
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摘要: CH薄膜的制备是埋点靶制备的关键技术之一,本文主要研究了钨丝辅助裂解制备CH薄膜的制备工艺。研究表明蒸发舟温度和衬底温度对沉积速率影响较大,而衬底距离对沉积速率影响较小;红外光谱和质谱分析表明薄膜的主要成分是聚对二甲苯。Abstract: The paper focuses on the production of CH film by way of hot wire chemical vapor deposition. The effect of substrate temperature, evaporator temperature and substrate distance on the deposition rate of the CH film is discussed. The CH film with thickness range of 4~30m m is produced with the substrate temperature being 235~265K and the evaporator temperature being 370~410K. It is observed that under the condition of low substrate temperature and appropriate evaporator temperature, the deposition rate would be higher, while substrate distance had little effect on it. The IR spectrum and mass spectrum show that the CH film mainly consists polystyrene.
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Key words:
- ch film /
- deposition rate /
- microspot targets
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