驱动光束不均匀性研究中的硅平面薄膜
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摘要: 介绍以氧化、扩散、光刻等现代半导体技术结合化学腐蚀工艺实现对Si片的定向自截止腐蚀，制备获得用于研究驱动光束不均匀性的自支撑Si平面薄膜的工艺。通过台阶仪测量厚度在3~4 μm的Si平面薄膜，在扫描范围为1000 μm时，它的表面粗糙度在几十nm；SEM测量表明，Si薄膜表面颗粒度在纳米量级；探讨采用控制扩散、腐蚀参数和表面修饰处理来降低Si膜表面粗糙度的方法。Abstract: The preparation process of thin silicon foil used to study the spatial nonuniformity in the laser driven intensity was introduced. Oxidation, diffusion, photoetching process and etching technology were adopted to achieve thin silicon foil with a thickness of 3 to 4 micrometers. The surface roughness was about tens nanometers and the grain size of silicon film was nanometer scale. The preparation parameters were studied to control the roughness of thin silicon foil.
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Key words:
- thin silicon foil /
- rayleigh-taylor instability /
- icf /
- spatial nonuniformity
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