电子束在VO2薄膜中引起的价态、相结构和光学性能的改变
Variations of valence state, phase-structure and optic properties of VO2 thin films induced by electron irradiation
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摘要: 利用能量为1.7MeV, 注量分别为1.25×1013/cm2, 1.25×1014/cm2, 1.25×1015/cm2的电子束辐照VO2薄膜，采用XPS, XRD等测试手段对电子辐照前后的样品进行分析，并研究了电子辐照对样品相变过程中光透射特性的影响。结果表明电子辐照引起VO2薄膜中V离子出现价态变化现象，并使薄膜的X射线衍射峰发生变化。电子辐照在样品中产生的这些变化显著改变了VO2薄膜的热致相变光学特性。Abstract: Vanadium dioxide thin films have been irradiated by electron beam with energy of 1.7MeV and fluence of 1.25×1013/cm2, 1.25×1014/cm2, 1.25×1015/cm2 respectively. Structure and V ion valence of the films have been studied by X-ray diffraction and X-ray photoelectron spectroscopy before and after electron irradiation, and their phase-transition properties have been characterized by optical transmittance analysis methods. The results show that the valence variation of V ion and the changes of XRD patterns of the irradiated samples have been detected, and the optical properties during phase-transition process have been changed obviously by electron irradiation.
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Key words:
- vo2 thin film /
- valence variation /
- phase structure /
- phase-transition properties /
- electron irradiation
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