用光激开关产生高功率亚纳秒电脉冲的研究
Investigation of high power sub-nanosecond electrical pulse generated by GaAs photoconductive switches
-
摘要: 报道了用全固态绝缘结构研制的横向型半绝缘GaAs光电导开关产生高功率亚纳秒电脉冲的性能和测试结果。8mm电极间隙的开关暗态绝缘强度达30kV。分别用ns, ps和fs激光脉冲触发开关的测试表明,开关输出电磁脉冲无晃动。3mm电极间隙开关的最短电流脉冲上升时间小于200ps,脉宽达亚ns;在偏置电压2000伏,光脉冲宽度8ns、能量1.2mJ的触发条件下,峰值电流达560A。用重复频率为76MHz和108Hz的光脉冲序列触发开关也获得清晰的电流脉冲序列。Abstract: In this paper, experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nano-second and pico-second and femto-second laser pulse are reported. The switches have all-solid-state insulated by multi-layer transparent dielectrics. Dark insulating intensity of the 8 mm-gap GaAs switch reached to 30kV. Jitter-free current wave form of the 3 mm-gap and 8 mm-gap GaAs switches were observed when triggered by the laser pulse. The current could be as high as 560A when the 3 mm-gap switch was under the voltage of 2 kV and triggered with 8 ns and 1.2 mJ laser pulse. The same device also revealed good temperal characteristics when trigger with pico-second laser and 108 repeat frequency laser pulse strings. The rising time the 3 mm-gap switch response is less than 2
点击查看大图
计量
- 文章访问数: 2745
- HTML全文浏览量: 271
- PDF下载量: 896
- 被引次数: 0