电子碰撞激发机制中自电离与双电子俘获
AUTOIONIZATION AND DIELECTRONIC CAPTURE IN Ne LIKE Ge COLLISIONAL X RAY LASER
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摘要: 以Ge为例，研究了双电子复合代替自电离与双电子俘获对离子布居的影响；通过解包括双激发态和自电离与双电子俘获过程的速率方程组，研究了类F离子与类Ne离子基态对19.6nm与23.6nm激光线上、下能级的布居贡献因子及类Na离子与类Ne离子的电离速率，并讨论了这两条激光线的反转与增益。
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关键词:
- 自电离与双电子俘获 /
- 双电子复合 /
- 类Ne-Ge离子碰撞机制
Abstract: Comparison of autoionization and dielectronic capture with dielectronic recombination in ion population in Ge plasma was given. Solving the coupled rate equations, the contribution factors from Flike and Nelike ions on the lower and the upper laser level of 19.6 and 23.6 nm lines, and the ionization rates of Nalike and Nelike ions were studied． Further more, inversion factor and gain at 19.6 and 23.6nm lines were discussed ． -
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