加载光子带隙膜系BaF2晶体闪烁光慢成分抑制和抗γ辐照损伤的研究

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Slow component suppression and γ radiation hardness of BaF2crystal modified by photonic band multilayer filter

1.
Pohl Institute of Solid State Physics,Tongji University,Shanghai 200092,China;
2.
Institute of Nuclear Physics and Chemistry,CＡＥＰ,P.O.Box 919 212,Mianyang 621900,China

摘要: 根据BaF2晶体闪烁光快、慢成分波段的不同，设计并制备了用于抑制该晶体闪烁光慢成分的Al2O3/MgF2/Al/MgF2…光子带隙膜系。实验结果显示：加载光子带隙膜系的BaF2晶体，其闪烁光快/慢成分比提高80倍以上；经剂量为1×105 Gy的60Co γ射线辐照后，其透射光谱、发射光谱和发光衰减时间谱没有明显的变化,这表明由光子带隙膜系与BaF2晶体所构成的快闪烁器件不仅可有效避免慢成分的干扰，而且还具有很强的抗γ辐射性能。
- BaF2晶体 /
- 光子带隙膜系 /
- 慢成分抑制 /
- 辐照损伤
Abstract: On the basis of the different emission bands between the fast and slow components in BaF2 crystal, the photonic band multilayer filter with 3.5 periods of Al2O3/MgF2/Al/MgF2… was designed and developed in order to suppress the slow component of the scintillation light in BaF2. It is shown that the filter can increase more than 80 times of the ratio of the intensities of the fast emission to the slow one, while the transmission, emission and decay time spectra of BaF2 crystal modified by the filter are not changed apparently after 60Co γray irradiation under the dose of 105 Gy. The results indicate that BaF2 crystal modified by the filter can not only avoid the interference of the slow component effectively, but also keep the good radiation resistance．
- baf2 crystal /
- photon /

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