Abstract: Zirconium oxide films were deposited on SiO2 substrates using high vacuum electron beam evaporation at room temperature．The films' transmittance and surface structure were investigated by means of ultraviolet spectrophotometer，AFM and XRD．The main effect of annealing at different temperatures on the physical properties of the films were studied as well．The AFM images differ little for ZrO２ films annealed at 700,900,and 1 050 ℃,showing crystal grains about 25 nm in diameter. However, the diameter of grains tends to grow with the temperature increase and it is about 400 nm at 1 150 ℃.The leakage current obviously increases and decreases the hot stability of zirconium oxide film while the temperature increases to about 1 150 ℃.