硅p-n结太阳电池对DF激光的响应
Response of silicon p-n junction solar cell to DF laser irradiation
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摘要: 对硅p-n结太阳电池在DF激光辐照下的响应进行了理论和实验研究。推导了p-n结反向饱和电流随温度的近似变化关系。根据该近似关系,计算了太阳电池在DF激光辐照过程中输出电压的变化曲线。计算结果和实验结果之间取得了比较好的一致性。
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关键词:
- 硅p-n结太阳电池 /
- p-n结反向饱和电流 /
- DF激光 /
- 光伏效应 /
- 温度效应
Abstract: The response of silicon p-n junction solar cell to DF laser irradiation is studied. It is found in the experiment that DF laser doesn't generate much photocarriers in the solar cell though the laser power is high enough to cause notable temperature rise. An approximate formula is deduced describing the temperature dependence of p-n junction leakage reverse current which is an important factor in the equation characterizing the output of the soar cell. With the equation, the photovoltaic effect and the temperature effect in the solar cell when laserirradiated are explained. Also with the formula, the output voltage of the solar cell under DF laser irradiation is calculated, which agrees with the experimental result.
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